Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications

High Speed Switching Applications • 1.8V drive • Low on-resistance: Ron = 363mΩ (max) (@VGS = −1.8 V) Ron = 230mΩ (max) (@VGS = −2.5 V) Ron = 158mΩ (max) (@VGS = −4.0 V)

Small-signal MOSFET

Polarity：P-ch\nGeneration：U-MOSⅢ\nRoHS Compatible Product(s) (#)：Available Drain current ID -1.8 A \nDrain-Source voltage VDSS -20 V \nGate-Source voltage VGSS +/-8 V ;