TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

Management Switch High Speed Switching Applications • Small package • Low on resistance: Ron = 2.7 Ω (max) (@VGS = −10 V) : Ron = 4.2 Ω (max) (@VGS = −4 V)

Small Low ON resistance MOSFETs

Polarity：P-ch\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Drain current ID -0.2 A \nPower Dissipation PD 0.15 W \nDrain-Source voltage VDSS -30 V \nGate-Source voltage VGSS +/-20 V ;