TOSHIBAFieldEffectTransistorSiliconPChannelMOSType

PowerManagementSwitch HighSpeedSwitchingApplications •Smallpackage •Lowonresistance:Ron=0.5Ω(max)(@VGS=−4V) :Ron=0.7Ω(max)(@VGS=−2.5V) •Lowgatethresholdvoltage

P-Channel30V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

TOSHIBAFieldEffectTransistorSiliconPChannelMOSType

PowerManagementSwitch HighSpeedSwitchingApplications •Componentpackagesuitableforhigh-densitymounting •SmallPackage •LowONResistance:Ron=0.5Ω(max)(@VGS=−4V) :Ron=0.7Ω(max)(@VGS=−2.5V) •Low-voltageoperationpossible

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

P-Channel30V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter