Advanced Power MOSFET

FEATURES ♦Avalanche Rugged Technology ♦Rugged Gate Oxide Technology ♦Lower Input Capacitance ♦Improved Gate Charge ♦Extended Safe Operating Area ♦Lower Leakage Current: 10µA (Max.) @ VDS= 500V ♦Lower RDS(ON): 0.197Ω(Typ.)

Advanced Power MOSFET

Advanced Power MOSFET

FEATURES ♦Avalanche Rugged Technology ♦Rugged Gate Oxide Technology ♦Lower Input Capacitance ♦Improved Gate Charge ♦Extended Safe Operating Area ♦Lower Leakage Current: 10µA (Max.) @ VDS= 500V ♦Lower RDS(ON): 0.197Ω(Typ.)

isc N-Channel MOSFET Transistor

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Power MOSFET(Vdss=500V, Rds(on)max=0.23ohm, Id=24A)

Applications 1.
Switch Mode Power Supply ( SMPS ) 2.
Uninterruptible Power Supply 3. High Speed Power Switching Benefits 1.
Low Gate Charge Qg results in Simple Drive Requirement 2.
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness 3.
Fully Characterized Capacitan

Power MOSFET(Vdss=500V, Rds(on)max=0.23ohm, Id=24A)

Applications 1.
Switch Mode Power Supply ( SMPS ) 2.
Uninterruptible Power Supply 3. High Speed Power Switching Benefits 1.
Low Gate Charge Qg results in Simple Drive Requirement 2.
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness 3.
Fully Characterized Capacitan

Power MOSFET(Vdss=500V, Rds(on)max=0.23ohm, Id=22A)

Applications Switch Mode Power Supply (SMPS) UninterruptIble Power Supply High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current