Enhancement Mode Power Mos.FET

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Enhancement Mode Power Mos.FET

64-bit, 1-bit per word random access read/write memory

DESCRIPTION The HEF4505B is a 64-bit, 1-bit per word, fully decoded and completely static, random access memory. The memory is strobed for reading or writing only when the strobe input (ST), chip enable inputs (CE1 and CE2) are HIGH simultaneously.

64-bit, 1-bit per word random access read/write memory

DESCRIPTION The HEF4505B is a 64-bit, 1-bit per word, fully decoded and completely static, random access memory. The memory is strobed for reading or writing only when the strobe input (ST), chip enable inputs (CE1 and CE2) are HIGH simultaneously.

64-bit, 1-bit per word random access read/write memory

DESCRIPTION The HEF4505B is a 64-bit, 1-bit per word, fully decoded and completely static, random access memory. The memory is strobed for reading or writing only when the strobe input (ST), chip enable inputs (CE1 and CE2) are HIGH simultaneously.

NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For general amplification (Tr1) For amplification of low-frequency output (Tr2) ■ Features • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half

Small signal combination IC for colour TV

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