20V Dual N-Channel MOSFET

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Features and Benefits:  Advanced MOSFETprocess technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature Description: It utilizes the lates

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MOSFET

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18V Dual N-Channel MOSFET

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20.2 dB GAIN 860 MHz 128-CHANNEL CATV AMPLIFIER

The RF Line High Output Power Doubler 860 MHz CATV Amplifier • Specified for 77, 110 and 128–Channel Performance • Broadband Power Gain - @ f = 40–860 MHz Gp = 20.2 dB (Typ) • Broadband Noise Figure NF = 7 dB (Typ) @ 860 MHz • All Gold Metallization • 7 GHz fT Ion–Implanted Transisto

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The MOC8204, MOC8205 and MOC8206 devices consist of gallium arsenide infrared emitting diodes optically coupled to high voltage, silicon, phototransis tor detectors in a standard 6–pin DIP package. They are designed for high voltage applications and are particularly useful in copy machines and sol

NICAM QPSK DEMODULATOR

DESCRIPTION The TDA8205 is essentially divided into two signal processing sections. The first section handles all the NICAM signal acquisition, the QPSK demodulator and clock and data recovery circuits. The key point to note about this section is the dual frequency synthesiser. By use of only o

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18W BTL x 2CH AUDIO POWER AMPLIFIER

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