PWM applications

DESCRIPTION The SSF2307 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -16V,ID = -4.7A RDS(ON)

PWM applications

High Power and current handing capability

DESCRIPTION The SSF2307B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -20V,ID = -3A RDS(ON)

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

MOSFET

10-bit 50MSPS RGB 3-channel D/A Converter

Description The CXD2307R is a 10-bit high-speed D/A converter for video band, featuring RGB 3-channel I/O. This is ideal for use in high-definition TVs and high-resolution displays. Features • Resolution 10-bit • Maximum conversion speed 50MSPS • RGB 3-channel I/O • Differentia

10-bit 50MSPS RGB 3-channel D/A Converter

Description The CXD2307R is a 10-bit high-speed D/A converter for video band, featuring RGB 3-channel I/O. This is ideal for use in high-definition TVs and high-resolution displays. Features • Resolution 10-bit • Maximum conversion speed 50MSPS • RGB 3-channel I/O • Differentia

Silicon NPN Transistor High Gain Power Amp

Features: • High Voltage • High DC Current Gain • High Collector Power Dissipation Capability

GENERAL PURPOSE AMPLIFIER

Product Description The RF2307 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

GENERAL PURPOSE AMPLIFIER

Product Description The RF2307 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica