150V N-Channel MOSFET

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Advanced trench MOSFET process technology

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MOSFET

150V N-Channel MOSFET

文件：1.15856 Mbytes Page：7 Pages

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 1000 Volts CURRENT - 15 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 15 Amperes FEATURES • Metal Case for Maximum Heat Dissipation. • Surge Overload Ratings to 400 Amperes. • These bridges are on the U/L Recognized Products List for currents of 15 amperes.

HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 15 Amperes)

FEATURES • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • The plastic package has Underwriters Laboratory Flammability Classification 94V-O. • Surge overload ratings to 300 Amperes .

1.575 GHz GPS DOWNCONVERTER

This integrated circuit is intended for GPS receiver applications. The dual conversion design is implemented in Motorola’s low–cost high performance MOSAIC 3 silicon bipolar process and is packaged in a low–cost surface mount TQFP–48 package. In addition to the mixers, a VCO, a PLL and a loop filt

1.7 GHz/ 2.0 GHz LOW-POWER TWO-MODULUS PRESCALER DIVIDED-BY-64/65, 128/129

DESCRIPTION µPB1502GR and µPB1502GR(1) are two-modulus prescaler divided by 64/65 or 128/129. This device is designed for mobile communication applications for example 0.8-1.9 GHz cellular and cordless telephones. The ICs operate on low power and therefore are suitable for hand-held, battery-oper