N-Ch Enhancement Mode Power MOSFET

DESCRIPTION The SSD15N10 provide the designer with the best combination of fast switching. The TO-252 package is universally preferred for all commercial-industrial surface mount applications. The device is suited for charger, industrial and consumer environment. FEATURES ● RDS(on) ≤ 100mΩ @ VG

N-Channel 100 V (D-S) MOSFET

文件：1.0089 Mbytes Page：7 Pages

N-Channel MOSFET uses advanced trench technology

文件：1.07456 Mbytes Page：4 Pages

MosFET

N-Ch Enhancement Mode Power MOSFET

文件：584.92 Kbytes Page：4 Pages

MosFET

N-Ch Enhancement Mode Power MOSFET

文件：219.61 Kbytes Page：4 Pages

N-Channel Enhancement Mode Power MOSFET

Description The 15N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other switching application. Application Battery switch DC/DC converter

14.7A, 100V (D-S) N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 15N10is an N-Channel enhancement MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. The UTC 15N10is suitable for high efficiency switching DC/DC converter, LCD display inverter and l

100V N-Channel Power MOSFET

文件：1.11304 Mbytes Page：8 Pages

P-Channel 30 V (D-S) MOSFET

文件：1.02293 Mbytes Page：8 Pages

N-Channel 100 V (D-S) MOSFET

文件：1.0134 Mbytes Page：7 Pages