High Current Density Surface-Mount Schottky Barrier Rectifiers

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available • Material categoriza

High Current Density Surface-Mount Schottky Barrier Rectifiers

High-Current Density Surface Mount Schottky Rectifier

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High Current Density Surface Mount Schottky Barrier Rectifiers

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High-Current Density Surface Mount Schottky Rectifier

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封装/外壳：DO-220AA 包装：卷带（TR） 描述：DIODE SCHOTTKY 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：DO-220AA 包装：卷带（TR） 描述：DIODE SCHOTTKY 60V 2A DO220AA 分立半导体产品 二极管 - 整流器 - 单

肖特基二极管与整流器 60volt 2.0amp

High Current Density Surface Mount Schottky Barrier Rectifiers

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Blocking voltage to 600 V

Description Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circu

Triacs sensitive gate

GENERAL DESCRIPTION Passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial domestic lighting, heating and staticand switchin

2A PLASTIC MOLDED THYRISTOR

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

Opto-Electronic Devices(NEPOC)

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Electric blanket,electronic jar,various temperature

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