Schottky Barrier Diode 30V, 2.0A Rectifier

Features • Small Switching noise. • Low forward voltage (IF=2A, VF max=0.40V). • Ultrasmall package permitting applied sets to be small and slim. Applications • High frequency rectification (switching regulators, converters, choppers).

Schottky Barrier Diode 30V, 2.0A, Low VF, Single MCPH6

Schottky Barrier Diode 30V, 2.0A, Low VF, Single MCPH6 Features • Small Switching noise • Low forward voltage (IF=2A, VF max=0.40V) • Small package permitting applied sets to be small and slim Applications • High frequency rectification (switching regulators, converters, choppers) • Haloge

Schottky Barrier Diode 30V, 2.0A, Low VF, Single MCPH6

Schottky Barrier Diode 30V, 2.0A, Low VF, Single MCPH6 Features • Small Switching noise • Low forward voltage (IF=2A, VF max=0.40V) • Small package permitting applied sets to be small and slim Applications • High frequency rectification (switching regulators, converters, choppers) • Haloge

肖特基势垒整流器，2.0 A，30 V

SS2003M is Schottky Barrier Diode 30V, 2.0A, Low VF, Single MCPH6 • Small Switching noise\n• Low forward voltage (IF=2A, VF max=0.40V)\n• Small package permitting applied sets to be small and slim;

Schottky Barrier Diode 30V, 2.0A, Low VF, Single MCPH6

Schottky Barrier Diode 30V, 2.0A, Low VF, Single MCPH6 Features • Small Switching noise • Low forward voltage (IF=2A, VF max=0.40V) • Small package permitting applied sets to be small and slim Applications • High frequency rectification (switching regulators, converters, choppers) • Haloge

Schottky Barrier Diode 30V, 2.0A, Low VF, Single MCPH6

Schottky Barrier Diode 30V, 2.0A, Low VF, Single MCPH6 Features • Small Switching noise • Low forward voltage (IF=2A, VF max=0.40V) • Small package permitting applied sets to be small and slim Applications • High frequency rectification (switching regulators, converters, choppers) • Haloge

Schottky Barrier Diode 30V, 2.0A, Low VF, Single MCPH6

Schottky Barrier Diode 30V, 2.0A, Low VF, Single MCPH6 Features • Small Switching noise • Low forward voltage (IF=2A, VF max=0.40V) • Small package permitting applied sets to be small and slim Applications • High frequency rectification (switching regulators, converters, choppers) • Haloge

封装/外壳：6-SMD，扁平引线 包装：卷带（TR） 描述：DIODE SCHOTTKY 30V 2A 6MCPH 分立半导体产品 二极管 - 整流器 - 单

丝印代码：A3；Silicon MMIC amplifier

DESCRIPTION Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin SOT343R package. FEATURES • Low current • Very high power gain • Low noise figure • Integrated temperature compensated biasing • Con

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Power Transistors Designed primarily for large–signal output and driver amplifier stages in the 1.0 to 2.3 GHz frequency range. • Designed for Class B or C, Common Base Power Amplifiers • Specified 28 Volt, 2.0 GHz Characteristics: Output Power — 1.0 to 20 Watts P

High Current/Voltage Darlington Drivers

文件：194.56 Kbytes Page：6 Pages

High Current/Voltage Darlington Drivers

文件：194.56 Kbytes Page：6 Pages

High Current/Voltage Darlington Drivers

文件：194.56 Kbytes Page：6 Pages