Schottky Barrier Diode 15V, 1A Rectifier

Schottky Barrier Diode 15V, 1A Rectifier Features • Low forward voltage (IF=0.3A, VFmax=0.32V) (IF=0.5A, VFmax=0.35V). • Ultrasmall package permitting applied sets to be small and slim (mounting height 0.85mm). Applications • High frequency rectification (switching regulators

Schottky Barrier Diode 15V, 1A Rectifier

POWER TRANSISTORS(50A,400-500V,250W)

SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated sw

50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS

SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated sw

NPN SILICON POWER DARLINGTON TRANSISTORS

SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated sw

50 Watts, 300-960 MHz GOLDMOS Field Effect Transistor

Description The PTF 10015 is a 50 Watt LDMOS FET intended for large signal amplifier applications from 300 to 960 MHz. It operates at 55 efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization are used to ensure excellent device lifetime and reliability. Features

ULTRA FAST RECOVERY MODULES

Ultrafast Recovery Modules • Ultra Fast Recovery • 175°C Junction Temperature • VRRM 100 to 800 Volts • Electrically isolated base • 2 X 50 Amp current rating • ROHS Compliant