SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features ● Low Turn-on Voltage ● Fast Switching ● PN Junction Guard Ring for Transient and ESD Protection ● Designed for Surface Mount Application ● Plastic Material – UL Recognition Flammability Classification 94V-O

SURFACE MOUNT SCHOTTKY BARRIER

VOLTAGE 20 to 40 Volts CURRENT 0.50 Ampers FEATURES • Low turn-on voltage • Fast switching • PN Junction Guard Ring for Transient and ESD Protection. • Pb free product : 99 Sn above can meet RoHS environment substance directive request

0.5A SURFACE MOUNT SCHOTTKY BARRIER DIODE

Low Turn-On Voltage Fast Switching PN Junction Guard Ring for Transient and ESD Protection Designed for Surface Mount Application Plastic Material – UL Recognition Flammability Classification 94V-0

0.5A 40V Schottky diode

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Schottky 

0.5A SURFACE MOUNT SCHOTTKY BARRIER DIODE

Low Turn-On Voltage Fast Switching PN Junction Guard Ring for Transient and ESD Protection Designed for Surface Mount Application Plastic Material – UL Recognition Flammability Classification 94V-0

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features ● Low Turn-on Voltage ● Fast Switching ● PN Junction Guard Ring for Transient and ESD Protection ● Designed for Surface Mount Application ● Plastic Material – UL Recognition Flammability Classification 94V-O

SURFACE MOUNT SCHOTTKY BARRIER DIODES

FEATURES • Low turn-on voltage • Fast switching • PN Junction Guard Ring for Transient and ESD Protection.

1.0 Ampere Schottky Power Rectifiers

Features • 0.5 ampere; forward voltage less than 460 mv. • 400 milliwatt Power Dissipation package. • Compact surface mount package with same footprint as mini-melf.

SCHOTTKY RECTIFIER

DESCRIPTION Single Schottky rectifier suited for switch mode power supplies and high frequency DC to DC converters. Packages in SOD-123, these devices are intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. Due to the small size of the p

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 400 Volt VDS * RDS(on)=50Ω

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 400 Volt VDS * RDS(on)=150Ω