Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers

Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rec

Isolated 20.0AMP. Schottky Barrier Rectifiers

Isolated 20.0AMP. Schottky Barrier Rectifiers Features
For surface mounted application
Low power loss, high efficiency
High current capability, low VF
High reliability
Epitaxial construction
Guard-ring for transient protection

Dual Common Cathode Schottky Rectifier

文件：224.85 Kbytes Page：4 Pages

封装/外壳：TO-220-3 全封装，隔离接片 包装：管件 描述：DIODE SCHOTTKY 20A 90V ITO220AB 分立半导体产品 二极管 - 整流器 - 阵列

全塑封整流管

20A, 90V, Schottky Rectifier

Isolated 20.0 AMPS. Schottky Barrier Rectifiers

文件：203.68 Kbytes Page：2 Pages

20.0AMPS. Isolated Schottky Barrier Rectifiers

文件：190.8 Kbytes Page：2 Pages

Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers

Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rec

封装/外壳：TO-220-3 全封装，隔离接片 包装：管件 描述：DIODE ARRAY SCHOTT 90V ITO220AB 分立半导体产品 二极管 - 整流器 - 阵列

12-bit, serial IN, parallel OUT driver

The BU2090, BU2090F, BU2090FS, BU2092, BU2092F, and BU2092FV are 12-bit serial input, parallel output drivers. For the BU2090 / F / FS, data input is shifted to the 12-bit internal shift register on the rising edge of a clock pulse. On the falling edge of the pulse, if the DATA pin is HIGH, the

12-24GHz Frequency Multiplier

Description The CHX2090 is a cascadable by 2 frequency multiplier monolithic circuit. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is m

12-24GHz Frequency Multiplier

Description The monolithic microwave IC (MMIC) in the package is a cascadable by 2 frequency multiplier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through th

SWITCHMODE??Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • 20 Amps Total (10 Amps Per Diode Leg) • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temper

Integrated Circuit 7-Channel Transistor Array

Description: The NTE2090 is an integrated circuit in a 16–Lead DIP type package comprised of six NPN low saturation drivers. All units feature integral clamp diodes for switching inductive loads and protective diodes for protection against a negative input voltage. Features: • Low Saturation