8.0 AMPS. Schottky Barrier Rectifiers

FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition

Schottky Barrier Rectifier

FEATURES · Low Power Loss, High Efficiency · High Surge Current Capability · Compliant to RoHS APPLICATIONS · Switching Power Supplies · Converters · Adapters

Schottky Rectifiers

8A, 40V, Schottky Rectifier

8.0 AMPS. Schottky Barrier Rectifiers

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8.0 AMPS. Schottky Barrier Rectifiers

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8.0 AMPS. Schottky Barrier Rectifiers

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8.0AMPS. Schottky Barrier Rectifiers

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Schottky Barrier Rectifier

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封装/外壳：TO-220-2 包装：管件 描述：DIODE SCHOTTKY 40V 8A TO220AC 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：TO-220-2 包装：管件 描述：DIODE SCHOTTKY 40V 8A TO220AC 分立半导体产品 二极管 - 整流器 - 单

N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

ULTRAFAST RECTIFIERS 8 AMPERES 200-400-600 VOLTS

. . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package • Epoxy Meets U

ULTRAFAST RECTIFIER 8.0 AMPERES 400 VOLTS

. . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 28 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package • Epoxy Meets UL94, VO @ 1/8″ • High T

RF POWER TRANSISTOR NPN SILICON

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ULTRAFAST RECTIFIER 8.0 AMPERES 400 VOLTS

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