丝印代码：SR840L；Schottky Barrier Rectifiers

FEATURES Guardring for overvoltage protection Low forward volta ge drop, Low power losses High forward surge capability High frequency operation Solder dip 275 °C max. 7 s, per JESD 22-B106

丝印代码：SR840L；8.0 AMP. LOW VF Schottky Barrier Rectifiers

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LOW VF SCHOTTKY BARRIER RECTIFIERS

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8.0A LOW VF SCHOTTKY BARRIER DIODE

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8.0A LOW VF SCHOTTKY BARRIER DIODE

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8.0 AMP. L O W V F Schottky Barrier Rectifiers

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LOW VF SCHOTTKY BARRIER RECTIFIER

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肖特基二极管

LOW VF SCHOTTKY BARRIER RECTIFIER

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LOW VF SCHOTTKY BARRIER RECTIFIER

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N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

ULTRAFAST RECTIFIERS 8 AMPERES 200-400-600 VOLTS

. . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package • Epoxy Meets U

ULTRAFAST RECTIFIER 8.0 AMPERES 400 VOLTS

. . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 28 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package • Epoxy Meets UL94, VO @ 1/8″ • High T

RF POWER TRANSISTOR NPN SILICON

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ULTRAFAST RECTIFIER 8.0 AMPERES 400 VOLTS

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