SCHOTTKY BARRIER RECTIFLER

Reverse Voltage - 20 to 200 Volts Forward Current - 8.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction ,majority carrier conduction • Guardring for overvoltage protection • Low power loss ,high efficiency

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

SCHOTTKY BARRIER RECTIFIERS

Features High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std..(Halogen Free) Low stored charge majority carrier conduction

SCHOTTKY BARRIER RECTIFIER

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SCHOTTKY BARRIER RECTIFIER

Ultra fast high-voltage soft-recovery controlled avalanche rectifiers

DESCRIPTION Plastic package, using glass passivation and a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package should be used in an insulating medium such as resin, oil or SF6 gas.

Silicon planar type

Silicon planar type For stabilization of power supply ■Features •Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) •Extremely good rising performance (in the low-current range) •Easy-to-select the optimum diode because

Silicon planar type

Silicon planar type For stabilization of power supply ■Features •Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) •Extremely good rising performance (in the low-current range) •Easy-to-select the optimum diode because

Silicon planar type

Silicon planar type For stabilization of power supply ■Features •Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) •Extremely good rising performance (in the low-current range) •Easy-to-select the optimum diode because

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor The TPV8200B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. Including input and output matchin