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SR3045CT

SCHOTTKY BARRIER RECTIFIERS

Features High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction

SUNMATE

森美特

SR3045CT

SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 40 to 200 V o l t s FORWARD CURRENT - 40.0 Amperes

Feaures  High efficiencty operation  Low power loss  High forward surge capability  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std..(Halogen Free)  Low stored charge majority carrier conduction Mechanical Data  Circuit figur

SHUNYE

顺烨电子

SR3045CT

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

SAMYANG

三阳电子

SR3045CT

Schottky Diodes

DACO

罡境电子

Schottky Barrier Rectifier

DGNJDZ

南晶电子

Schottky Barrier Rectifier

文件:103.78 Kbytes Page:2 Pages

DGNJDZ

南晶电子

SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. This state–of–the–art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 V Blocking Voltage • Low Forw

MOTOROLA

摩托罗拉

Optoisolator Silicon NPN Darlington Phototransistor Output

Description: The NTE3045 is a gallium arsenide LED optically coupled to a Silicon Photo Darlington transistor in a 6–Lead DIP type package designed for applications requiring electrical isolation, high breakdown voltage, and high current transfer ratios. Characterized for use as telephone relay d

NTE

Rectifier diodes schottky barrier

GENERAL DESCRIPTION Dual, low leakage, platinum barrier, schottky rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intended

PHILIPS

飞利浦

LM3045/LM3046/LM3086 Transistor Arrays

文件:179.01 Kbytes Page:6 Pages

NSC

国半

LM3045/LM3046/LM3086 Transistor Arrays

文件:179.01 Kbytes Page:6 Pages

NSC

国半

SR3045CT产品属性

  • 类型

    描述

  • Io@Tc(A):

    30

  • Io@Tc(℃):

    105

  • IFSM(A):

    200

  • IR@Tj25℃ (mA):

    0.5

  • VF(V):

    0.63

  • IF(A):

    15

  • Tj:

    -65℃ to +150℃

更新时间:2026-5-20 18:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
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