Automotive N-Channel 60 V (D-S) 175 째C MOSFET

文件：154.27 Kbytes Page：9 Pages

Automotive N-Channel 60 V (D-S) 175 °C MOSFET

Automotive N-Channel 60 V (D-S) 175 °C MOSFET

文件：154 Kbytes Page：10 Pages

Automotive N-Channel 60 V (D-S) 175 째C MOSFET

文件：156.11 Kbytes Page：8 Pages

Automotive N-Channel 60 V (D-S) 175 째C MOSFET

文件：155.47 Kbytes Page：8 Pages

Automotive N-Channel 60 V (D-S) 175 °C MOSFET

Automotive N-Channel 60 V (D-S) 175 째C MOSFET

文件：156.11 Kbytes Page：8 Pages

封装/外壳：TO-220-3 包装：卷带（TR） 描述：MOSFET N-CH 60V TO220AB 分立半导体产品 晶体管 - FET，MOSFET - 单个

Silicon N-Channel Power MOSFET

General Description： CS120N06 C8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system min

60V N-Ch Power MOSFET

Feature ◇ High Speed Power Switching, Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in T

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60V N-Channel Trench MOSFET

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OptiMOS Power-Transistor

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