Single N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V, 4.6A, RDS(ON) = 65mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V, 4.6A, RDS(ON) = 65mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 82mW @VGS = 4.5V.

LOW PROFILE SHIELDED SMD CHIP POWER INDUCTOR

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Cu Alloy Bare Ferrule, Smooth Funnel Entry, 6 AWG, 0.59 L, Seamless bbl, Tin Plated, For Use On Cu Cond.

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Transient Voltage Suppressor Diodes

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