位置：首页 > IC中文资料第5083页 > SPU09P06PL
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SPU09P06PL | SIPMOS Power-Transistor 文件：230.78 Kbytes Page：8 Pages | Infineon 英飞凌 |   | |
SPU09P06PL | P-Channel 60-V (D-S) MOSFET 文件：939.63 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | |
SPU09P06PL | MOSFET P-CH 60V 9.7A TO-251 | Infineon 英飞凌 | | |
SIPMOS Power-Transistor Feature • P-Channel • Enhancement mode • Logic Level prueb •175°C operating temperature • Avalanche rated • dv/dt rated • P-channel • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated • Pb-free lead plating; RoHS compliant ° Qualified accord | Infineon 英飞凌 | | ||
SIPMOS Power-Transistor 文件：230.78 Kbytes Page：8 Pages | Infineon 英飞凌 | | ||
SIPMOS Power-Transistor Feature N-Channel Enhancement mode 文件：1.26144 Mbytes Page：9 Pages | Infineon 英飞凌 | | ||
SIPMOS Power-Transistor 文件：581.79 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
SIPMOS Power-Transistor Feature N-Channel Enhancement mode 文件：1.26144 Mbytes Page：9 Pages | Infineon 英飞凌 | |
SPU09P06PL产品属性
- 类型
描述
- 型号
SPU09P06PL
- 功能描述
MOSFET P-CH 60V 9.7A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
20+ |
PG-TO251-3 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
INFINEON/英飞凌 |
22+ |
TO-251 |
100000 |
代理渠道/只做原装/可含税 |
|||
ST |
25+ |
原厂原封 |
16900 |
原装，请咨询 |
|||
VBsemi |
21+ |
TO251 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VBsemi |
24+ |
TO-251 |
18000 |
原装正品 有挂有货 假一赔十 |
|||
INFINEON |
22+ |
P-TO251-3-1 |
8000 |
原装现货库存.价格优势 |
|||
Infineon Technologies |
22+ |
TO2513 Short Leads IPak TO251A |
9000 |
原厂渠道,现货配单 |
|||
INFINEON |
24+ |
P-TO251-3-1 |
8866 |
||||
VBsemi |
25+ |
TO-251 |
3427 |
||||
INFINE0N |
23+ |
TO-251 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
SPU09P06PL规格书下载地址
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