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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-ChannelMOSFETTransistor •DESCRITION •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤1.4Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   | |
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.4Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice perf | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | | |
N-Channel650V(D-S)MOSFET 文件：2.54815 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
N-Channel650V(D-S)PowerMOSFET 文件：2.51693 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
SOT263 |
699839 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
INF |
1535+ |
3613 |
|||||
Infineon |
17+ |
TO-263 |
6200 |
||||
INFINEON |
23+ |
TO-263 |
7936 |
||||
Infineon(英飞凌) |
23+ |
TO-263 |
8498 |
支持大陆交货,美金交易。原装现货库存。 |
|||
INFINEON/英飞凌 |
23+ |
NA/ |
900 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
INFINEON |
2016+ |
SOP |
6528 |
只做原厂原装现货!终端客户个别型号可以免费送样品! |
|||
INFINEON |
23+ |
TO-263 |
12300 |
全新原装真实库存含13点增值税票! |
|||
INFINEON |
08+(pbfree) |
P-TO263-3-2 |
8866 |
||||
infineon |
22+ |
35000 |
OEM工厂,中国区10年优质供应商! |
SPU03N60S5XK芯片相关品牌
SPU03N60S5XK规格书下载地址
SPU03N60S5XK参数引脚图相关
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SPU03N60S5XK数据表相关新闻
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2020-11-10
DdatasheetPDF页码索引
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