Phototransistor

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GaAlAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode Light source for distance measuring systems Features ● High-power output, high-efficiency : PO = 5.5 mW (typ.) ● Fast response and high-speed modulation capability : tr, tf = 20 ns (typ.) ● Infrared light emission close to monochromatic light : λP = 880 nm

GaAlAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode Light source for distance measuring systems ■ Features • High-power output, high-efficiency: PO = 5.5 mW (typ.) • Fast response and high-speed modulation capability: tr, tf = 20 ns (typ.) • Infrared light emission close to monochromatic light: λP = 880 nm

GaAlAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode Light source for distance measuring systems Features ● High-power output, high-efficiency : PO = 5.5 mW (typ.) ● Fast response and high-speed modulation capability : tr, tf =20 ns (typ.) ● Infrared light emission close to monochromatic light : λP = 880 nm(

Silicon Complementary Transistors High Voltage Amplifier & Driver

Description: The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a TO202N type package designed for general purpose, high voltage amplifier and driver applications. Features: • High Collector–Emitter Breakdown Voltage: V(BR)CEO = 80V @ IC = 1mA • High Power Dis

HIGH ENERGY SPARK GAP DEVICES

DESCRIPTION CP Clare’s TG Legacy Series of two electrode sparkgaps excel in applications that require the efficient transfer of high voltage, high energy pulses and DC overvoltage protection for magnetrons, diodes, capacitors, etc. The TG Legacy Series also includes three electrode triggered sp