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SPP11N80C3价格
参考价格：￥10.4782
型号：SPP11N80C3 品牌：Infineon 备注：这里有SPP11N80C3多少钱，2025年最近7天走势，今日出价，今日竞价，SPP11N80C3批发/采购报价，SPP11N80C3行情走势销售排行榜，SPP11N80C3报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SPP11N80C3 | Cool MOS??Power Transistor Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) | Infineon 英飞凌 |   | |
SPP11N80C3 | Cool MOS Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances CoolMOSTM 800V designed for: | Infineon 英飞凌 | | |
SPP11N80C3 | CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances CoolMOSTM 800V designed for: | Infineon 英飞凌 | | |
SPP11N80C3 | Isc N-Channel MOSFET Transistor • FEATURES • Ultra low effective capacitances • Low gate charge • Improved transconductance • Low gate drive power loss • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications | ISC 无锡固电 | | |
SPP11N80C3 | 500V-900V CoolMOS™ N-Channel Power MOSFET | Infineon 英飞凌 | | |
SPP11N80C3 | Cool MOS??Power Transistor 文件：677.4 Kbytes Page：13 Pages | Infineon 英飞凌 | | |
Cool MOS Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances CoolMOSTM 800V designed for: | Infineon 英飞凌 | | ||
CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances CoolMOSTM 800V designed for: | Infineon 英飞凌 | | ||
Cool MOS??Power Transistor 文件：677.4 Kbytes Page：13 Pages | Infineon 英飞凌 | | ||
Cool MOS??Power Transistor Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) | Infineon 英飞凌 | | ||
Cool MOS??Power Transistor 文件：677.4 Kbytes Page：13 Pages | Infineon 英飞凌 | | ||
isc N-Channel MOSFET Transistor 文件：335.33 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Cool MOS??Power Transistor 文件：677.4 Kbytes Page：13 Pages | Infineon 英飞凌 | | ||
CoolMOSTM Power Transistor Features New revolutionary high voltage technology 文件：295.55 Kbytes Page：10 Pages | Infineon 英飞凌 | |
SPP11N80C3产品属性
- 类型
描述
- 型号
SPP11N80C3
- 功能描述
MOSFET COOL MOS N-CH 800V 11A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
2016+ |
TO-220 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
INFINEON/英飞凌 |
25+ |
TO-220 |
32360 |
INFINEON/英飞凌全新特价SPP11N80C3即刻询购立享优惠#长期有货 |
|||
INF |
24+/25+ |
TO220 |
5649 |
100%原装正品真实库存,支持实单 |
|||
英飞凌 |
13+ |
TO-220 |
92 |
只做原装正品 |
|||
INFINEON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
INFINEON |
23+ |
TO220 |
9526 |
||||
INFINEON |
TO-220 |
450 |
正品原装--自家现货-实单可谈 |
||||
INFINEON |
23+ |
TO220 |
6996 |
只做原装正品现货 |
|||
INFINEON/英飞凌 |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
INFINEON |
16+ |
TO-220 |
26291 |
进口原装现货 |
SPP11N80C3规格书下载地址
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2020-11-10
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