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SPP08N50C3价格
参考价格：￥5.1929
型号：SPP08N50C3 品牌：Infineon 备注：这里有SPP08N50C3多少钱，2024年最近7天走势，今日出价，今日竞价，SPP08N50C3批发/采购报价，SPP08N50C3行情走势销售排行榜，SPP08N50C3报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SPP08N50C3 | CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •PG-TO-220-3-31;-3-111:Fullyisolatedpackage(2500VAC;1minute) •Pb-freeleadplating;RoHScomp | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   |
SPP08N50C3 | N-ChannelMOSFETTransistor •DESCRITION •Newrevolutionaryhighvoltagetechnology •Ultraloweffectivecapacitance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performancean | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
SPP08N50C3 | NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated 文件：732.57 Kbytes Page：14 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated 文件：732.57 Kbytes Page：14 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
N-ChannelMOSFETTransistor •DESCRITION •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤600mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
IscN-ChannelMOSFETTransistor •FEATURES •DrainCurrentID=7.6A@TC=25℃ •DrainSourceVoltage- :VDSS=500V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •PG-TO-220-3-31;-3-111:Fullyisolatedpackage(2500VAC;1minute) •Pb-freeleadplating;RoHScomp | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated 文件：732.57 Kbytes Page：14 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
CoolMOSPowerTransistor 文件：620.29 Kbytes Page：11 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
SPP08N50C3产品属性
- 类型
描述
- 型号
SPP08N50C3
- 功能描述
MOSFET COOL MOS PWR TRANS 560V 7.6A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
22+ |
TO-220 |
360000 |
进口原装房间现货实库实数 |
|||
Infineon/英飞凌 |
21+ |
PG-TO220 |
6820 |
只做原装,质量保证 |
|||
INFINEON/英飞凌 |
22+ |
TO-220 |
12800 |
本公司只做进口原装!优势低价出售! |
|||
INFINEON |
23+ |
NA |
30 |
现货!就到京北通宇商城 |
|||
INFINEON/英飞凌 |
2024+实力库存 |
TO-220 |
426 |
只做原厂渠道 可追溯货源 |
|||
INFINEON/英飞凌 |
21+ |
TO-220 |
60000 |
绝对原装正品现货,假一罚十 |
|||
INFINEON |
23+ |
T0-220 |
7936 |
||||
Infineon |
18+ |
NA |
3000 |
进口原装正品优势供应QQ3171516190 |
|||
INF |
2345+ |
原厂封装 |
495 |
只做原装优势现货库存 渠道可追溯 |
|||
Infineon/英飞凌 |
2023+ |
PG-TO220 |
6000 |
原装正品现货、支持第三方检验、终端BOM表可配单提供 |
SPP08N50C3芯片相关品牌
SPP08N50C3规格书下载地址
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DdatasheetPDF页码索引
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