Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) • Pb-free lead plating; RoHS comp

N-Channel MOSFET Transistor

• DESCRITION • New revolutionary high voltage technology • Ultra low effective capacitance • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance an

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

文件：732.57 Kbytes Page：14 Pages

500V-900V CoolMOS™ N-Channel Power MOSFET

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

文件：732.57 Kbytes Page：14 Pages

N-Channel MOSFET Transistor

• DESCRITION • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤600mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Isc N-Channel MOSFET Transistor

• FEATURES • Drain Current ID= 7.6A@ TC=25℃ • Drain Source Voltage- : VDSS=500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.6Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) • Pb-free lead plating; RoHS comp

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

文件：732.57 Kbytes Page：14 Pages

Cool MOS Power Transistor

文件：620.29 Kbytes Page：11 Pages