Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

丝印代码：07N65C3；Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance ● PG-TO-220-3: Fully isolated package (2500 VAC; 1 minute) • Pb-free lead plating; RoHS compliant • Quali

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

500V-900V CoolMOS™ N-Channel Power MOSFET

650V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. Replacement for 650V CoolMOS™ C3 is CoolMOS™ P7. • Low specific on-state resistance (RDS(on)*A)\n• Very low energy storage in output capacitance (Eoss) @400V\n• Low gate charge (Qg)\n• Fieldproven CoolMOS™ quality\n• CoolMOS™ technology has been manufactured by Infineon since 1998\n\n优势:\n• High efficiency and power density\n• Outstanding cost/per;

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

文件：3.03035 Mbytes Page：15 Pages

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance ● PG-TO-220-3: Fully isolated package (2500 VAC; 1 minute) • Pb-free lead plating; RoHS compliant • Quali

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

文件：3.03035 Mbytes Page：15 Pages

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

文件：3.03035 Mbytes Page：15 Pages

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

文件：3.03035 Mbytes Page：15 Pages