位置:首页 > IC中文资料 > SPN2318

型号 功能描述 生产厂家 企业 LOGO 操作
SPN2318

N-Channel Enhancement Mode MOSFET

文件:216.01 Kbytes Page:8 Pages

SYNC-POWER

擎力科技

SPN2318

MOSFET

SYNC-POWER

擎力科技

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

VBSEMI

微碧半导体

N-Channel Enhancement Mode MOSFET

文件:216.49 Kbytes Page:8 Pages

SYNC-POWER

擎力科技

N-Channel Enhancement Mode MOSFET

文件:216.01 Kbytes Page:8 Pages

SYNC-POWER

擎力科技

N-Channel Enhancement Mode MOSFET

文件:216.49 Kbytes Page:8 Pages

SYNC-POWER

擎力科技

N-Channel Enhancement Mode MOSFET

文件:339.68 Kbytes Page:8 Pages

SYNC-POWER

擎力科技

MOSFET

SYNC-POWER

擎力科技

Marktech 5mm Ultra Bright Y G LEDs

FEATURES • Excellent on/off contrasts • Low drive current • High intensity green and InGaAlP yellow • Choice of lens color • Can be packaged on tape in a reel or in a box

MARKTECH

Silicon NPN Transistor High Voltage, High Speed Switch

Description: The NTE2318 is a high–voltage, high–speed, switching NPN transistor with an internal damper diode in a TO218 type package. This device is specifically designed for use in large screen color deflection circuits. Features: ● Collector–Emitter Voltage: VCE = 1500V ● Collector–Emitter

NTE

LINEAR BROADBAND AMPLIFIER

Product Description The RF2318 is a broadband general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 75Ω gain block. The gain flatne

RFMD

威讯联合

LINEAR BROADBAND AMPLIFIER

Product Description The RF2318 is a broadband general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 75Ω gain block. The gain flatne

RFMD

威讯联合

LINEAR BROADBAND AMPLIFIER

Product Description The RF2318 is a broadband general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 75Ω gain block. The gain flatne

RFMD

威讯联合

SPN2318产品属性

  • 类型

    描述

  • VDSSV:

    40

  • VGS V:

    12

  • VTH_Min_V:

    0.5

  • VTH_Max_V:

    1

  • IDS_25℃_A:

    4

  • RDS(Max)_10V_mΩ:

    56

  • RDS(Max)_4.5V_mΩ:

    62

  • RDS(Max)_2.5V_mΩ:

    95

  • Package:

    SOT-23-3L

更新时间:2026-8-3 18:11:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SYNCPOWER
20+
SOT-23
9181
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SYNCPOWER/擎力
26+
SOT-23
15000
一级代理优势现货,全新正品直营店
SYNCPOWER擎力
23+
SOT-23-3L
24190
原装正品代理渠道价格优势
SYNCPOWER擎力
26+
SOT-23
86720
代理授权原装正品价格最实惠 本公司承诺假一赔百
SYNCPOWER
24+
SOT-23
9600
原装现货,优势供应,支持实单!
SYNCPOWER
22+
SOT-23
20000
只做原装
SYNCPOWER
2022+
SOT-23
40000
原厂代理 终端免费提供样品
SYNCPOWER
25+
SOT-23
90000
全新原装现货
SYNCPOWER
23+
SOT-23
50000
全新原装正品现货,支持订货
SYNCPOWER
23+
SOT-23-3L
50000
原装正品 支持实单

SPN2318数据表相关新闻