Unmounted Laser Bars 20 W cw ... 100 W qcw

Features • Unmounted monolithic linear array • High efficiency MOVPE-grown quantum well structure • Highly reliable strained layer InGa(Al)As/GaAs material • Standard wavelength selection is ± 3 nm, others on request • Solderable p- and n-side metalization Applications • Pumping of solid st

Un-mounted Laser Bars, 50 Fill-factor, 980 nm

Features • Un-mounted monolithic linear array • High-efficiency MOVPE-grown quantum-well structure • Highly reliable strained-layer InGa(Al)As/GaAs material • Standard wavelength selection is ± 3 nm • Other pulse wavelengths are available upon request • Solderable p- and n-side metallization

Un-mounted Laser Bars, 50 Fill-factor, 980 nm

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