Cool MOS??Power Transistor

Cool MOS™ Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity

isc N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perform

500V-900V CoolMOS™ N-Channel Power MOSFET

·Innovative high voltage technology\n ·Worldwide best R DS(on) in TO-251 and TO-252\n ·Ultra low gate charge\n ·Periodic avalanche rated\n ·Extreme dv/dt rated\n ·Ultra low effective capacitances\n ·Improved transconductance;

Cool MOS??Power Transistor

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Cool MOS??Power Transistor Feature New revolutionary high voltage technology

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Cool MOS??Power Transistor

文件：108.07 Kbytes Page：10 Pages

Cool MOS??Power Transistor

Cool MOS™ Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity

Cool MOS??Power Transistor

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-251 and TO-252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Pb-free lead plating; RoHS

Cool MOS??Power Transistor

Cool MOS™ Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity

Cool MOS??Power Transistor

Cool MOS™ Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity