位置：首页 > IC中文资料第3567页 > SPI07N60S5
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SPI07N60S5 | Cool MOS??Power Transistor Cool MOS™ Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity | Infineon 英飞凌 |   | |
SPI07N60S5 | isc N-Channel MOSFET Transistor • DESCRIPTION • Ultra low gate charge • High peak current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perform | ISC 无锡固电 | | |
SPI07N60S5 | 500V-900V CoolMOS™ N-Channel Power MOSFET | Infineon 英飞凌 | | |
SPI07N60S5 | Cool MOS??Power Transistor 文件：108.07 Kbytes Page：10 Pages | Infineon 英飞凌 | | |
SPI07N60S5 | Cool MOS??Power Transistor Feature New revolutionary high voltage technology 文件：534.26 Kbytes Page：12 Pages | Infineon 英飞凌 | | |
Cool MOS??Power Transistor 文件：108.07 Kbytes Page：10 Pages | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • Ultra low gate charge • High peak current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perform | ISC 无锡固电 | | ||
Cool MOS??Power Transistor Cool MOS™ Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity | Infineon 英飞凌 | | ||
N-Channel 65 0V (D-S)Power MOSFET 文件：2.123 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | ||
N-Channel MOSFET Transistor 文件：335.34 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Cool MOS Power Transistor 文件：652.3 Kbytes Page：11 Pages | Infineon 英飞凌 | |
SPI07N60S5产品属性
- 类型
描述
- 型号
SPI07N60S5
- 功能描述
MOSFET COOL MOS N-CH 600V 7.3A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
Infineon Technologies |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原厂渠道,现货配单 |
|||
INFINEON |
23+ |
TO-262 |
3000 |
原装正品假一罚百!可开增票! |
|||
INFINEON/英飞凌 |
22+ |
TO-262 |
12245 |
现货,原厂原装假一罚十! |
|||
INFINE0N |
23+ |
TO-262-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
INFINEON |
11+ |
TO-262 |
180 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Infineon(英飞凌) |
24+ |
- |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
INFINEON |
24+ |
TO-262 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
INFINEON |
24+ |
P-TO262-3-1 |
8866 |
||||
INFINEON/英飞凌 |
24+ |
TO-262 |
39197 |
郑重承诺只做原装进口现货 |
SPI07N60S5芯片相关品牌
SPI07N60S5规格书下载地址
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SPI07N60S5数据表相关新闻
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做的是诚信，卖的是良心。
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属性 参数值 商品目录 压接端子 触头材料 磷青铜 触头镀层 锡 线规 - AWG 24~30 镀层厚度 - 线规 - mm2 0.05~0.22 产品类型 压线端子 认证 RoHS
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Bluetooth 射频收发器 , Zigbee 射频收发器 , SX126x 射频收发器 , - 16 dBm to + 13 dBm ASK, FSK 射频收发器 , 8DPSK, DQPSK, GFSK 射频收发器 , 142 MHz to 1050 MHz 16 dBm 射频收发器
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2020-6-11SPH252012H4R7MTSPH2520系列绕线贴片功18138231376
联系人：刘冬英 电话：0755-83203002 手机：18138231376 QQ号：1546282226、微信号：18138231376 公司名称：深圳市光华微科技有限公司 Shenzhen Guanghua Micro Technology Co.， Ltd 公司地址：深圳市福田区振兴路华匀大厦1栋712室
2019-10-14
DdatasheetPDF页码索引
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