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SPD04N80C3价格
参考价格：￥5.5229
型号：SPD04N80C3 品牌：Infineon 备注：这里有SPD04N80C3多少钱，2025年最近7天走势，今日出价，今日竞价，SPD04N80C3批发/采购报价，SPD04N80C3行情走势销售排行榜，SPD04N80C3报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SPD04N80C3 | Cool MOS??Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance | Infineon 英飞凌 |   | |
SPD04N80C3 | N-Channel MOSFET Transistor • DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤1.3Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | |
SPD04N80C3 | 500V-900V CoolMOS™ N-Channel Power MOSFET | Infineon 英飞凌 | | |
SPD04N80C3 | CoolMOSTM Power Transistor Features New revolutionary high voltage technology 文件：442.21 Kbytes Page：10 Pages | Infineon 英飞凌 | | |
SPD04N80C3 | CoolMOSTM Power Transistor 文件：394.99 Kbytes Page：10 Pages | Infineon 英飞凌 | | |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology 文件：442.21 Kbytes Page：10 Pages | Infineon 英飞凌 | | ||
CoolMOSTM Power Transistor 文件：394.99 Kbytes Page：10 Pages | Infineon 英飞凌 | | ||
CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤1.3Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • High peak current capability • Ultra low gate charge • Ultra low effective capacitances • FEATURES • Static drain-source on-resistance: RDS(on) ≤1.3Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device | ISC 无锡固电 | | ||
Cool MOS??Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances CoolMOSTM 800V designed for: | Infineon 英飞凌 | | ||
Cool MOSTM Power Transistor 文件：375.96 Kbytes Page：10 Pages | Infineon 英飞凌 | |
SPD04N80C3产品属性
- 类型
描述
- 型号
SPD04N80C3
- 功能描述
MOSFET COOL MOS N-CH 800V 4A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
24+ |
TO-252-2(DPAK) |
25000 |
原装正品,假一赔十! |
|||
INFINEON/英飞凌 |
22+ |
TO252 |
9000 |
原装正品,支持实单! |
|||
INFINEON |
25+ |
TO-252 |
30000 |
代理全新原装现货,价格优势 |
|||
INFINEON |
23+ |
TO252 |
6996 |
只做原装正品现货 |
|||
INFINEON |
25+ |
TO252 |
3000 |
全新原装、诚信经营、公司现货销售! |
|||
Infineon/英飞凌 |
21+ |
TO-252-2(DPAK) |
6820 |
只做原装,质量保证 |
|||
INFINEON/英飞凌 |
24+ |
TO-252 |
12500 |
只做原装假一赔十 |
|||
INFINEON/英飞凌 |
2025+ |
TO252 |
850 |
原装进口价格优 请找坤融电子! |
|||
INFINEON/英飞凌 |
25+ |
TO-252 |
1860 |
全新原装正品支持含税 |
|||
INFINEON |
2430+ |
TO252 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
SPD04N80C3规格书下载地址
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