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SPD价格
参考价格:¥2.4522
型号:SPD01N60C3 品牌:Infineon 备注:这里有SPD多少钱,2024年最近7天走势,今日出价,今日竞价,SPD批发/采购报价,SPD行情走势销售排行榜,SPD报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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SPD | Over Voltage & Under Voltage Cut-Off With Surge Protection Device OVCDFeatures •ExtendsTheLifeOfYourFixtureByEliminating TemporaryOver/UnderVoltagesthatCan HarmSensitiveElectronicComponents •Over6,000OperationsPerProductLifetime •SafeRestore™ -30SecondDelayonPower-Up -InstantDroponOver/UnderVoltageCondition -30SecondDel | ABLEPOWERPRODUCTSABLE Power Products 易恩孚易恩孚太阳能 | ||
SPD | C to Ku Band Mixer, Detector, Modulator Applications Features •Verysmall-sizedceramicpackage •Lessparasiticcomponents,conversionloss •Manytypes:5singletypes,10integratedtypes | SANYOSanyo 三洋三洋电机株式会社 | ||
SPD | 20 Amp 50-400 Volt 120 nsec FAST RECOVERY RECTIFIER Features: •FastRecovery:120nsecmaximum •LowReverseLeakageCurrent •SingleChipConstruction •PIVto400V •HermeticallySealed •HighSurgeRating •LowThermalResistance •HigherVoltageDevicesAvailable–ContactFactory •ForReversePolarityAddSuffix“R” •Replacementfor | SSDI SSDI | ||
SPD | Compact, High-Performance String Pot Dual Ouput to 50 文件:939.34 Kbytes Page:4 Pages | TECTE Connectivity Ltd 泰科电子泰科电子有限公司 | ||
Cool MOS??Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Cool MOS??Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
N-Channel 650 V (D-S) MOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
Cool MOS Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
N-Channel MOSFET Transistor •DESCRITION •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤3Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Power MOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
SIPMO Power Transistor SIPMOS®PowerTransistor •N-Channel •Enhancementmode •Avalancherated | SIEMENS Siemens Ltd | |||
Cool MOS Power Transistor CoolMOS™PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
N-Channel MOSFET Transistor •DESCRITION •Ultraloweffectivecapacitance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤3Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-Channel 650 V (D-S) MOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
Cool MOS??Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapp | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
N-Channel MOSFET Transistor •DESCRITION •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤3Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-Channel MOSFET Transistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤2.7Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
CoolMOS Power Transistor Features •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Cool MOS Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant;availableHalogenfreemoldcompounda) •Qualifiedaccording | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
N-Channel MOSFET Transistor •DESCRITION •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.4Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Cool MOS Power Transistor CoolMOS™PowerTransistor Features •Newrevolutioanaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •Pb-freeleadplaing;RoHScompliant •QualifiedaccordingtoJEDECfortar | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
N-Channel MOSFET Transistor •DESCRITION •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.4Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Cool MOS??Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
N-Channel MOSFET Transistor •DESCRITION •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤1.4Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Cool MOS Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
N-Channel MOSFET Transistor •DESCRITION •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.95Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Cool MOS??Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvednoiseimmunity | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Cool MOS Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
N-Channel MOSFET Transistor •DESCRITION •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.95Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Cool MOS??Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Cool MOS??Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
N-Channel MOSFET Transistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤1.3Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Cool MOS??Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
60W, Single Output Adapter [SUNPOWERTECHNOLOGYCORP.] Features: *UniversalACinput88~264VAC *Lowripplenoise *Overload,overvoltage&shortcircuitprotection *ACinletIEC320C14 *Singleoutputmodelsnonminloadrequirement *10050℃burn-intest *UL,cUL,TUV,CB,CEstandard *1yearswa | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
N-Channel MOSFET Transistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.75Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
CoolMOS Power Transistor Features •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Highpeakcurrentcapability •Ultraloweffectivecapacitances •Extremedv/dtrated •Improvedtransconductance •Pb-freeleadplating;RoHScompliant availableinHalogenfreem | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Cool MOS??Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO252 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
N-Channel MOSFET Transistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.9Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SIPMOS Power Transistor Features •Nchannel •Enhancementmode •Avalancherated •dv/dtrated | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
N-Channel MOSFET Transistor •DESCRITION •Idealforhigh-frequencyswitchingandsynchronousrectification •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.4Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-Channel 200 V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •175°CJunctionTemperature •PWMOptimized •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PrimarySideSwitch | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
Cool MOS??Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO-251andTO-252 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvednoiseimmunity | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Cool MOS Power Transistor CoolMOS™PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO-251andTO-252 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •Pb-freeleadplating;Rohscom | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
N-Channel MOSFET Transistor •DESCRITION •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.6Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Cool MOS??Power Transistor CoolMOS™PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO-251andTO-252 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHS | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
1 AMP 80-100 VOLTS SCHOTTKY RECTIFIER FEATURES: ■PIVto100Volts ■ExtremelyLowForwardVoltageDrop ■LowReverseLeakageCurrent ■HighSurgeCapacity ■HighVoltageReplacementfor: ■1N5817-1N5819Series ■Surfacemountversionsavailable ■TX,TXV,andSpaceLevelScreeningAvailable | SSDI SSDI | |||
2 AMP 80 - 100 VOLTS SCHOTTKY RECTIFIER Features: •PIVto100Volts •ExtremelyLowForwardVoltageDrop •LowReverseLeakageCurrent •HighSurgeCapacity •HV/Replacementfor1N5817-1N5819Series •HermeticallySealed •TX,TXV,andSpaceLevelScreeningAvailable2/ •CategoryIIImetallurgicalbondperMILPRF19500appen | SSDI SSDI | |||
2 AMP 80 - 100 VOLTS SCHOTTKY RECTIFIER Features: •PIVto100Volts •ExtremelyLowForwardVoltageDrop •LowReverseLeakageCurrent •HighSurgeCapacity •HV/Replacementfor1N5817-1N5819Series •HermeticallySealed •TX,TXV,andSpaceLevelScreeningAvailable2/ •CategoryIIImetallurgicalbondperMILPRF19500appen | SSDI SSDI | |||
SIPMOS-R POWER TRANSISTOR Features •Nchannel •Enhancementmode •Avalancherated •LogicLevel •dv/dtrated •175˚Coperatingtemperature | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
SIPMOS Power Transistor Features •Nchannel •Enhancementmode •Avalancherated •dv/dtrated | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Cool MOS??Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO-252 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant;availableinHalogenfreem | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
N-Channel MOSFET Transistor •DESCRITION •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤600mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
1 AMP 80-100 VOLTS SCHOTTKY RECTIFIER FEATURES: ■PIVto100Volts ■ExtremelyLowForwardVoltageDrop ■LowReverseLeakageCurrent ■HighSurgeCapacity ■HighVoltageReplacementfor: ■1N5817-1N5819Series ■Surfacemountversionsavailable ■TX,TXV,andSpaceLevelScreeningAvailable | SSDI SSDI | |||
2 AMP 80 - 100 VOLTS SCHOTTKY RECTIFIER Features: •PIVto100Volts •ExtremelyLowForwardVoltageDrop •LowReverseLeakageCurrent •HighSurgeCapacity •HV/Replacementfor1N5817-1N5819Series •HermeticallySealed •TX,TXV,andSpaceLevelScreeningAvailable2/ •CategoryIIImetallurgicalbondperMILPRF19500appen | SSDI SSDI | |||
2 AMP 80 - 100 VOLTS SCHOTTKY RECTIFIER Features: •PIVto100Volts •ExtremelyLowForwardVoltageDrop •LowReverseLeakageCurrent •HighSurgeCapacity •HV/Replacementfor1N5817-1N5819Series •HermeticallySealed •TX,TXV,andSpaceLevelScreeningAvailable2/ •CategoryIIImetallurgicalbondperMILPRF19500appen | SSDI SSDI | |||
SIPMOS PowerTransistor Features •Nchannel •Enhancementmode •Avalancherated •dv/dtrated •175˚Coperatingtemperature | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
SIPMOS Power-Transistor Feature •P-Channel •Enhancementmode •LogicLevelprueb •175°Coperatingtemperature •Avalancherated •dv/dtrated •P-channel •Enhancementmode •LogicLevel •175°Coperatingtemperature •Avalancherated •dv/dtrated •Pb-freeleadplating;RoHScompliant °Qualifiedaccord | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
1 AMP 80-100 VOLTS SCHOTTKY RECTIFIER FEATURES: ■PIVto100Volts ■ExtremelyLowForwardVoltageDrop ■LowReverseLeakageCurrent ■HighSurgeCapacity ■HighVoltageReplacementfor: ■1N5817-1N5819Series ■Surfacemountversionsavailable ■TX,TXV,andSpaceLevelScreeningAvailable | SSDI SSDI | |||
2 AMP 80 - 100 VOLTS SCHOTTKY RECTIFIER Features: •PIVto100Volts •ExtremelyLowForwardVoltageDrop •LowReverseLeakageCurrent •HighSurgeCapacity •HV/Replacementfor1N5817-1N5819Series •HermeticallySealed •TX,TXV,andSpaceLevelScreeningAvailable2/ •CategoryIIImetallurgicalbondperMILPRF19500appen | SSDI SSDI | |||
2 AMP 80 - 100 VOLTS SCHOTTKY RECTIFIER Features: •PIVto100Volts •ExtremelyLowForwardVoltageDrop •LowReverseLeakageCurrent •HighSurgeCapacity •HV/Replacementfor1N5817-1N5819Series •HermeticallySealed •TX,TXV,andSpaceLevelScreeningAvailable2/ •CategoryIIImetallurgicalbondperMILPRF19500appen | SSDI SSDI |
SPD产品属性
- 类型
描述
- 型号
SPD
- 制造商
SANYO
- 制造商全称
Sanyo Semicon Device
- 功能描述
C to Ku Band Mixer, Detector, Modulator Applications
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SOLOMON |
2020+ |
TQFP-10 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
SOLOMON |
13+ |
QFP |
16660 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Microchip Technology |
23+ |
模块 |
30000 |
二极管-分立半导体产品-原装正品 |
|||
INFINEON/英飞凌 |
23+ |
TO-252 |
76000 |
IR英飞凌VISHAY专做 全新原装进口正品假一赔百,可开13 |
|||
ST |
23+ |
SMA |
5000 |
原装正品!假一罚十! |
|||
SOLOMON |
23+ |
TQFP-100 |
9920 |
原厂原装正品 |
|||
INFINEON |
23+ |
TO-252 |
10000 |
原装正品公司现货 |
|||
Infineon(英飞凌) |
22+ |
SMD |
7525 |
场效应管/明嘉莱只做原装正品现货 |
|||
INFINEON |
22+ |
8SOP |
2500 |
原厂直供一类客户价格无敌,实力现货商 |
|||
INFINEON |
21+ |
TO252 |
2500 |
青岛现货 原装正品 实单来谈 |
SPD规格书下载地址
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