位置：首页 > IC中文资料 > SPBAS21DW5T1G
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HighVoltageSwitchingDiode HighVoltage SwitchingDiodeDeviceMarking: •BAS19LT1=JP •BAS20LT1=JR •BAS21LT1=JS •BAS21DW5T1=JS Features •Pb−FreePackagesareAvailable | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  |   | |
HighVoltageSwitchingDiode HighVoltage SwitchingDiodeDeviceMarking: •BAS19LT1=JP •BAS20LT1=JR •BAS21LT1=JS •BAS21DW5T1=JS Features •Pb−FreePackagesareAvailable | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
HighVoltageSwitchingDiode 文件：128.41 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
HighVoltageSwitchingDiode 文件：128.41 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
HighVoltageSwitchingDiode 文件：131.96 Kbytes Page：6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
22+ |
N/A |
681000 |
现货,原厂原装假一罚十! |
|||
ON/安森美 |
22+ |
SMD |
24000 |
原装正品 |
|||
ON |
新批次 |
SC70-5 |
4326 |
||||
onsemi |
24+ |
5-TSSOP,SC-70-5,SOT-353 |
30000 |
二极管-分立半导体产品-原装正品 |
|||
ON |
2020+ |
SOT353 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
ON/安森美 |
21+ |
NA |
681000 |
只做原装,假一罚十 |
|||
onsemi |
21+ |
SOT-353 (SC-88A, SC-70-5) |
30000 |
正规渠道原装正品现货 |
|||
ON/安森美 |
23+ |
SOT-353 |
30000 |
原装正品公司现货,假一赔十! |
|||
三年内 |
1983 |
纳立只做原装正品13590203865 |
|||||
23+ |
N/A |
78500 |
一级代理放心采购 |
SPBAS21DW5T1G芯片相关品牌
SPBAS21DW5T1G规格书下载地址
SPBAS21DW5T1G参数引脚图相关
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SPBAS21DW5T1G数据表相关新闻
SPC5602BK0CLH4
原装正品现货
2022-5-24SPC5200CBV400B
https://hfx03.114ic.com/
2022-3-28SPC5602BK0VLL6
SPC5602BK0VLL6
2021-3-17SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
2019-12-16SPB17N80C3BSZ520N15NS3G特价热销
SPB17N80C3BSZ520N15NS3G电信，供电系统
2019-8-6SPA20N60CFD-CoolMOS功率晶体管
特点•新的革命高电压技术•内在的快速恢复体二极管•极低的反向恢复电荷•超低栅极电荷•至尊的dv/dt的额定•高峰值电流能力•定期雪崩额定•合格的为工业级应用根据JEDEC0）•无铅引脚电镀，符合RoHS标准
2012-11-10
DdatasheetPDF页码索引
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