位置：首页 > IC中文资料第2203页 > SPB80N06S-08
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SPB80N06S-08 | SIPMOS짰 Power-Transistor 文件：171.57 Kbytes Page：8 Pages | Infineon 英飞凌 |   | |
SPB80N06S-08 | SIPMOS Power-Transistor 文件：209.08 Kbytes Page：8 Pages | Infineon 英飞凌 | | |
SPB80N06S-08 | N-Channel 60 V (D-S) MOSFET 文件：1.96964 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | |
SIPMOS Power-Transistor 文件：209.08 Kbytes Page：8 Pages | Infineon 英飞凌 | | ||
SIPMOS짰 Power-Transistor 文件：171.57 Kbytes Page：8 Pages | Infineon 英飞凌 | | ||
SIPMOS Power-Transistor 文件：209.08 Kbytes Page：8 Pages | Infineon 英飞凌 | |
SPB80N06S-08产品属性
- 类型
描述
- 型号
SPB80N06S-08
- 功能描述
MOSFET N-CH 55V 80 A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
1822+ |
TO263-3- |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
INFINEON/英飞凌 |
23+ |
SOT263 |
9000 |
正规渠道原装正品 |
|||
Infineon/英飞凌 |
24+ |
PG-TO263-3 |
25000 |
原装正品,假一赔十! |
|||
Infineon/英飞凌 |
23+ |
PG-TO263-3 |
25630 |
原装正品 |
|||
Infineon/英飞凌 |
21+ |
PG-TO263-3 |
6820 |
只做原装,质量保证 |
|||
Infineon/英飞凌 |
2021+ |
PG-TO263-3 |
9600 |
原装现货，欢迎询价 |
|||
Infineon(英飞凌) |
24+ |
TO-263 |
8498 |
支持大陆交货,美金交易。原装现货库存。 |
|||
INFINEON |
原厂封装 |
1000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
INFINEON |
24+ |
PG-TO263-3D2-PAK(T |
8866 |
||||
INFINE0N |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
SPB80N06S-08规格书下载地址
SPB80N06S-08参数引脚图相关
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SPB80N06S-08数据表相关新闻
SPC5602BK0CLH4
原装正品现货
2022-5-24SPC5200CBV400B
https://hfx03.114ic.com/
2022-3-28SPC5602BK0VLL6
SPC5602BK0VLL6
2021-3-17SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
2019-12-16SPB17N80C3BSZ520N15NS3G特价热销
SPB17N80C3 BSZ520N15NS3 G 电信 ，供电系统
2019-8-6SPA20N60CFD-CoolMOS功率晶体管
特点 •新的革命高电压技术 •内在的快速恢复体二极管 •极低的反向恢复电荷 •超低栅极电荷 •至尊的dv/ dt的额定 •高峰值电流能力 •定期雪崩额定 •合格的为工业级应用根据JEDEC0） •无铅引脚电镀，符合RoHS标准
2012-11-10
DdatasheetPDF页码索引
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