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SPB价格
参考价格：￥141.3581
型号：SPB-01 品牌：3M 备注：这里有SPB多少钱，2024年最近7天走势，今日出价，今日竞价，SPB批发/采购报价，SPB行情走势销售排行榜，SPB报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SPB | ADSL MODEM?갌AX?갩ELEPHONE 文件：728.79 Kbytes Page：4 Pages | SPSEMIStarHope 瞬雷电子 |  |   |
10 AMP 20 VOLTS BYPASS DIODE ASSEMBLY FEATURES: •DesignedforSpaceUseonFlexibleSolarPannels •HermeticallySealed. •WideTemperatureRange:-100to+150oC •QualifiedDesignto20,000TemperatureCycles •FlexibleLeads-WeldedorSolderedTermination •LargeRadiationSurfaceforOperationwithoutHeatsink | SSDI SSDI |  | | |
Cool MOS Power Transistor Features •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | | |
Cool MOS Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Isc N-Channel MOSFET Transistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
N-Channel 650 V (D-S) MOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
Cool MOS Power Transistor Features •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Cool MOS??Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Cool MOS??Power Transistor Feature New revolutionary high voltage technology Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Isc N-Channel MOSFET Transistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-Channel 650 V (D-S) MOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
Cool MOS??Power Transistor Feature New revolutionary high voltage technology Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Cool MOS Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Isc N-Channel MOSFET Transistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-Channel 650V (D-S) Power MOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
Cool MOS??Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
High Power Factor LED Replacement T8 Fluorescent Tube Introduction ThisapplicationnotedescribestheprinciplesanddesignequationsrequiredforthedesignofahighbrightnessLEDlampusingtheAL9910.Theequationsarethenusedtodemonstratethedesignofauniversal,offline,highpowerfactor(PF),13WLEDlampsuitableforuseasthere | DIODESDiodes Incorporated 达尔科技 |  | | |
N-Channel 650 V (D-S) MOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
Cool MOS Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Cool MOS??Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
N-Channel 650V (D-S) Power MOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
Cool MOS Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Isc N-Channel MOSFET Transistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-Channel 650V (D-S) Power MOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
Cool MOS??Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Cool MOS??Power Transistor Feature New revolutionary high voltage technology Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Isc N-Channel MOSFET Transistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-Channel 650V (D-S) Power MOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
Cool MOS??Power Transistor Feature New revolutionary high voltage technology Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
5W DC-DC Regulated Single Output Converter Features: •2:1wideinputrange •1500VDCI/Oisolation •Built-inremoteON/OFFcontrol •Built-inEMIfilter •Protections:Shortcircuit/Overload •Coolingbyfreeairconvection •Singleinlinepackage •100fullloadburn-intest •Lowcost/Highreliability •Modifiedmodels | MEANWELLMean Well Enterprises Co., Ltd. 明纬电子明纬（广州）电子有限公司 |  | | |
Power Bead Inductors Features -Shieldedconstructionforlowradiation -Highratedcurrent -LowDCR -RoHScompliantandhalogenfree | BournsBourns Inc. 伯恩斯（邦士） |  | | |
Power Bead Inductors Features -Shieldedconstructionforlowradiation -Highratedcurrent -LowDCR -RoHScompliantandhalogenfree | BournsBourns Inc. 伯恩斯（邦士） | | | |
Power Bead Inductors Features -Shieldedconstructionforlowradiation -Highratedcurrent -LowDCR -RoHScompliantandhalogenfree | BournsBourns Inc. 伯恩斯（邦士） | | | |
Power Bead Inductors Features -Shieldedconstructionforlowradiation -Highratedcurrent -LowDCR -RoHScompliantandhalogenfree | BournsBourns Inc. 伯恩斯（邦士） | | | |
Cool MOS??Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
N-Channel 650V (D-S) Power MOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
Cool MOS??Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •PG-TO-220-3-31;-3-111:Fullyisolatedpackage(2500VAC;1minute) •Pb-freeleadplating;RoHScomplian | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Cool MOS??Power Transistor CoolMOS™PowerTransistor •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Optimizedcapacitances •Improvednoiseimmunity | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Isc N-Channel MOSFET Transistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-Channel 650V (D-S) Power MOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
Power Bead Inductors Features -Shieldedconstructionforlowradiation -Highratedcurrent -LowDCR -RoHScompliantandhalogenfree | BournsBourns Inc. 伯恩斯（邦士） | | | |
Power Bead Inductors Features -Shieldedconstructionforlowradiation -Highratedcurrent -LowDCR -RoHScompliantandhalogenfree | BournsBourns Inc. 伯恩斯（邦士） | | | |
Power Bead Inductors Features -Shieldedconstructionforlowradiation -Highratedcurrent -LowDCR -RoHScompliantandhalogenfree | BournsBourns Inc. 伯恩斯（邦士） | | | |
Power Bead Inductors Features -Shieldedconstructionforlowradiation -Highratedcurrent -LowDCR -RoHScompliantandhalogenfree | BournsBourns Inc. 伯恩斯（邦士） | | | |
Power Bead Inductors Features -Shieldedconstructionforlowradiation -Highratedcurrent -LowDCR -RoHScompliantandhalogenfree | BournsBourns Inc. 伯恩斯（邦士） | | | |
Power Bead Inductors Features -Shieldedconstructionforlowradiation -Highratedcurrent -LowDCR -RoHScompliantandhalogenfree | BournsBourns Inc. 伯恩斯（邦士） | | | |
Power Bead Inductors Features -Shieldedconstructionforlowradiation -Highratedcurrent -LowDCR -RoHScompliantandhalogenfree | BournsBourns Inc. 伯恩斯（邦士） | | | |
Power Bead Inductors Features -Shieldedconstructionforlowradiation -Highratedcurrent -LowDCR -RoHScompliantandhalogenfree | BournsBourns Inc. 伯恩斯（邦士） | | | |
Power Bead Inductors Features -Shieldedconstructionforlowradiation -Highratedcurrent -LowDCR -RoHScompliantandhalogenfree | BournsBourns Inc. 伯恩斯（邦士） | | | |
Power Bead Inductors Features -Shieldedconstructionforlowradiation -Highratedcurrent -LowDCR -RoHScompliantandhalogenfree | BournsBourns Inc. 伯恩斯（邦士） | | | |
Power Bead Inductors Features -Shieldedconstructionforlowradiation -Highratedcurrent -LowDCR -RoHScompliantandhalogenfree | BournsBourns Inc. 伯恩斯（邦士） | | | |
Power Bead Inductors Features -Shieldedconstructionforlowradiation -Highratedcurrent -LowDCR -RoHScompliantandhalogenfree | BournsBourns Inc. 伯恩斯（邦士） | | | |
Power Bead Inductors Features -Shieldedconstructionforlowradiation -Highratedcurrent -LowDCR -RoHScompliantandhalogenfree | BournsBourns Inc. 伯恩斯（邦士） | | | |
5,000 V - 20,000 V Single Phase Bridge 2.0 A Forward Current 70 ns Recovery Time SinglePhaseBridge-HighVoltageSPBSeries 2.0A•70ns | VMI Voltage Multipliers |  | | |
5,000 V - 20,000 V Single Phase Bridge 2.0 A Forward Current 70 ns Recovery Time SinglePhaseBridge-HighVoltageSPBSeries 2.0A•70ns | VMI Voltage Multipliers | | | |
Power Bead Inductors Features -Shieldedconstructionforlowradiation -Highratedcurrent -LowDCR -RoHScompliantandhalogenfree | BournsBourns Inc. 伯恩斯（邦士） | | | |
Power Bead Inductors Features -Shieldedconstructionforlowradiation -Highratedcurrent -LowDCR -RoHScompliantandhalogenfree | BournsBourns Inc. 伯恩斯（邦士） | | | |
Power Bead Inductors Features -Shieldedconstructionforlowradiation -Highratedcurrent -LowDCR -RoHScompliantandhalogenfree | BournsBourns Inc. 伯恩斯（邦士） | | | |
Power Bead Inductors Features -Shieldedconstructionforlowradiation -Highratedcurrent -LowDCR -RoHScompliantandhalogenfree | BournsBourns Inc. 伯恩斯（邦士） | | | |
Power Bead Inductors Features -Shieldedconstructionforlowradiation -Highratedcurrent -LowDCR -RoHScompliantandhalogenfree | BournsBourns Inc. 伯恩斯（邦士） | | |
SPB产品属性
- 类型
描述
- 型号
SPB
- 制造商
STIG RAVN
- 功能描述
DRAWER UNIT BLUE
- 制造商
STIG RAVN
- 功能描述
DRAWER UNIT, BLUE
- 制造商
STIG RAVN
- 功能描述
DRAWER UNIT, BLUE, Cabinet
- Style
Drawer, Cabinet
- Material
-, External Height -
- Imperial
11.81", External Height -
- Metric
300mm, External Width -
- Metric
273mm, External Depth -
- Metric
251mm,
- Colour
Blue, External
- Depth
251mm, External, RoHS
- Compliant
NA
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
22+ |
TO-263 |
96000 |
原装进口现货假一赔十 |
|||
NEC |
23+ |
SOP-8 |
18000 |
||||
INFINEON |
22+ |
SOT220 |
14000 |
进口原装 |
|||
Infineon |
1645+ |
? |
7500 |
只做原装进口,假一罚十 |
|||
TI/德州仪器 |
22+ |
TQFP128 |
3000 |
原装正品,支持实单 |
|||
GI |
23+ |
NA |
1399 |
航宇科工半导体-中国航天科工集团战略合作伙伴! |
|||
Infineon |
18+ |
NA |
3621 |
进口原装正品优势供应QQ3171516190 |
|||
Infineon |
19+ |
SOT263 |
9200 |
||||
Infineon(英飞凌) |
2021/2022+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
INFINEON |
23+ |
TO-263 |
7936 |
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2012-11-10
DdatasheetPDF页码索引
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- P74
- P75
- P76
- P77
- P78
- P79
- P80
