SPA??Silicon Protection Array Products 30pF Bi-Directional 0201 TVS Diode for ESD Protection

Description The SP1005 includes back-to-back Zener diodes fabricated in a proprietary silicon avalanche technology to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes above the

30pF 30kV Bidirectional Discrete TVS

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包装：袋 描述：RIGHT WINDOW 原型开发，制造品 配件

普通ESD保护

SP1005包含了以专有硅雪崩技术制造的背对背齐纳二极管，为可能经历破坏性静电放电（ESD）的电子设备提供保护。 这些二极管功能强大，可以在高于IEC 61000-4-2国际标准规定的最高级别（4级，8KV接触放电）情况下，安全吸收反复性ESD放电，无需担心其性能的减退。 存在交流信号时，背对背配置可为数据线提供对称ESD保护。 • ESD，IEC61000-4-2，±30kV（触点），±30kV（空气）\n• EFT，IEC61000-4-4，40A（5/50ns\n• 雷击，IEC61000-4-5，10A（tP=8/20μs）\n• 低电容，30pF （@ VR=0V）\n• 电压5V时的低泄漏电流为0.1μA\n• 紧凑型封装尺寸（0201和0402）;

丝印代码：LB；1-Line Bi-directional TVS Diode

Features Ultra low leakage: nA level Low operating voltage: 5V Low clamping voltage 2-pin leadless package Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-5 (Lightning) 10A (8/20μs) RoHS Compliant Applic

SPA??Silicon Protection Array Products 30pF Bi-Directional 0201 TVS Diode for ESD Protection

Description The SP1005 includes back-to-back Zener diodes fabricated in a proprietary silicon avalanche technology to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes above the

普通ESD保护

SP1005包含了以专有硅雪崩技术制造的背对背齐纳二极管，为可能经历破坏性静电放电（ESD）的电子设备提供保护。 这些二极管功能强大，可以在高于IEC 61000-4-2国际标准规定的最高级别（4级，8KV接触放电）情况下，安全吸收反复性ESD放电，无需担心其性能的减退。 存在交流信号时，背对背配置可为数据线提供对称ESD保护。 • ESD，IEC61000-4-2，±30kV（触点），±30kV（空气）\n• EFT，IEC61000-4-4，40A（5/50ns\n• 雷击，IEC61000-4-5，10A（tP=8/20μs）\n• 低电容，30pF （@ VR=0V）\n• 电压5V时的低泄漏电流为0.1μA\n• 紧凑型封装尺寸（0201和0402）;

30pF 30kV Bidirectional Discrete TVS

文件：915.64 Kbytes Page：5 Pages

30pF 30kV Bidirectional Discrete TVS

文件：915.64 Kbytes Page：5 Pages

封装/外壳：0201（0603 公制） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TVS DIODE 6VWM 15.6VC 0201 FLIP 电路保护 TVS - 二极管

30pF 30kV Bidirectional Discrete TVS

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tyco electronics contents

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REFERENCE FREQUENCY 16.368 MHz, 2ND IF FREQUENCY 4.092 MHz RF/IF FREQUENCY DOWN-CONVERTER PLL FREQUENCY SYNTHESIZER IC FOR GPS RECEIVER

DESCRIPTION The µPB1005K is a silicon monolithic integrated circuit for GPS receiver. This IC is designed as double conversion RF block integrated RF/IF down-converter + PLL frequency synthesizer on 1 chip. The µPB1005K features 36-pin plastic QFN, fixed prescaler and supply voltage. The

REFERENCE FREQUENCY 16.368 MHz, 2ND IF FREQUENCY 4.092 MHz RF/IF FREQUENCY DOWN-CONVERTER PLL FREQUENCY SYNTHESIZER IC FOR GPS RECEIVER

DESCRIPTION The µPB1005GS is a silicon monolithic integrated circuit for GPS receiver. This IC is designed as double conversion RF block integrated RF/IF down-converter + PLL frequency synthesizer on 1 chip. The µPB1005GS features shrink package, fixed prescaler and supply voltage. The 30

REFERENCE FREQUENCY 16.368 MHz, 2ND IF FREQUENCY 4.092 MHz RF/IF FREQUENCY DOWN-CONVERTER PLL FREQUENCY SYNTHESIZER IC FOR GPS RECEIVER

DESCRIPTION The µPB1005K is a silicon monolithic integrated circuit for GPS receiver. This IC is designed as double conversion RF block integrated RF/IF down-converter + PLL frequency synthesizer on 1 chip. The µPB1005K features 36-pin plastic QFN, fixed prescaler and supply voltage. The

10-Bit P Compatible A/D Converter

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10-Bit P Compatible A/D Converter

文件：254.3 Kbytes Page：12 Pages