DC-8 GHz, Cascadable GaAs MMIC Amplifier

Product Description Stanford Microdevices’ SNA-476 is a GaAs monolithic broadband amplifier (MMIC) housed in a low-cost surface mountable stripline ceramic package. This amplifier provides 13dB of gain when biased at 70mA and 5.0V. Product Features • Cascadable 50 Ohm Gain Block • 13dB Gain, +

DC-8 GHz, cascadable GaAs MMIC amplifier. Cascadable 50 ohm gain block.

DC-8 GHz, Cascadable GaAs MMIC Amplifier

Product Description Stanford Microdevices’ SNA-476 is a GaAs monolithic broadband amplifier (MMIC) housed in a low-cost surface mountable stripline ceramic package. This amplifier provides 13dB of gain when biased at 70mA and 5.0V. Product Features • Cascadable 50 Ohm Gain Block • 13dB Gain, +

DC-8 GHz, Cascadable GaAs MMIC Amplifier

Product Description Stanford Microdevices’ SNA-476 is a GaAs monolithic broadband amplifier (MMIC) housed in a low-cost surface mountable stripline ceramic package. This amplifier provides 13dB of gain when biased at 70mA and 5.0V. Product Features • Cascadable 50 Ohm Gain Block • 13dB Gain, +

DC-8 GHz, Cascadable GaAs MMIC Amplifier

Product Description Stanford Microdevices’ SNA-476 is a GaAs monolithic broadband amplifier (MMIC) housed in a low-cost surface mountable stripline ceramic package. This amplifier provides 13dB of gain when biased at 70mA and 5.0V. Product Features • Cascadable 50 Ohm Gain Block • 13dB Gain, +

CMOS Monolithic 256x18 Color Palette RAM-DAC

GENERAL DESCRIPTION The ADV476 (ADV®) is a pin compatible and software compatible RAM-DAC designed specifically for VGA and Personal System/2 color graphics. The ADV476 is a complete analog output RAM-DAC on a single monolithic chip. The part contains a 256318 color lookup table, a pixel mask re

Round Type

Round Type φ 3.2 mm Series

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF476is Designed for 12.5 V FM Large-Signal Amplifier Applications to 30 MHz.

Silicon NPN Transistor RF Power Output

Description: The NTE476 is a silicon epitaxial NPN–planar transistor which employs a multi–emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters result in high RF current handling capability, high power gain, low base resista

Round Type

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