DC-6.5 GHz, Cascadable GaAs MMIC Amplifier

Product Description Stanford Microdevices’ SNA-276 is a GaAs monolithic broadband amplifier (MMIC) housed in a low-cost surface mountable stripline package. This amplifier provides 16dB of gain when biased at 50mA and 4V. Product Features • Cascadable 50 Ohm Gain Block • 16dB Gain, +14dBm P1dB

DC-6.5 GHz, cascadable GaAs MMIC amplifier. Cascadable 50 ohm gain block.

DC-6.5 GHz, Cascadable GaAs MMIC Amplifier

Product Description Stanford Microdevices’ SNA-276 is a GaAs monolithic broadband amplifier (MMIC) housed in a low-cost surface mountable stripline package. This amplifier provides 16dB of gain when biased at 50mA and 4V. Product Features • Cascadable 50 Ohm Gain Block • 16dB Gain, +14dBm P1dB

DC-6.5 GHz, Cascadable GaAs MMIC Amplifier

Product Description Stanford Microdevices’ SNA-276 is a GaAs monolithic broadband amplifier (MMIC) housed in a low-cost surface mountable stripline package. This amplifier provides 16dB of gain when biased at 50mA and 4V. Product Features • Cascadable 50 Ohm Gain Block • 16dB Gain, +14dBm P1dB

DC-6.5 GHz, Cascadable GaAs MMIC Amplifier

Product Description Stanford Microdevices’ SNA-276 is a GaAs monolithic broadband amplifier (MMIC) housed in a low-cost surface mountable stripline package. This amplifier provides 16dB of gain when biased at 50mA and 4V. Product Features • Cascadable 50 Ohm Gain Block • 16dB Gain, +14dBm P1dB

VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor delivers an output power of 100 W in class-B operation at a supply voltage of 50 V. The transistor is encapsulated in a 6-lead, SOT

Low Power Transceiver Chip

DESCRIPTION The DS276 Line-Powered RS-232 Transceiver Chip is a CMOS device that provides a low-cost, very low-power interface to RS-232 serial ports. The receiver input translates RS-232 signal levels to common CMOS/TTL levels. The transmitter can be used with independently supplied positive a

Silicon Schottky Barrier Diode for Mixer

Features • High forward current, Low capacitance. • Ultra small Flat Package (UFP) is suitable for surface mount design.

Round Type

Round Type φ 3.2 mm Series

Round Type

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