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SN74CBTLV3857价格
参考价格：￥2.7867
型号：SN74CBTLV3857DWR 品牌：TI 备注：这里有SN74CBTLV3857多少钱，2025年最近7天走势，今日出价，今日竞价，SN74CBTLV3857批发/采购报价，SN74CBTLV3857行情走势销售排行榜，SN74CBTLV3857报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SN74CBTLV3857 | LOW-VOLTAGE 10-BIT FET BUS SWITCH WITH INTERNAL PULLDOWN RESISTORS Enable Signal Is SSTL_2 Compatible Flow-Through Architecture Optimizes PCB Layout Designed for Use With 200 Mbit/s Double Data-Rate (DDR) SDRAM Applications Switch On-State Resistance Is Designed to Eliminate Series Resistor to DDR SDRAM Internal 10-kΩ Pulldown Resistors to Ground on B Por | TI 德州仪器 |   | |
SN74CBTLV3857 | 具有内部下拉电阻的 3.3V、1:1 (SPST)、10 通道 FET 总线开关 | TI 德州仪器 | | |
SN74CBTLV3857 | LOW-VOLTAGE 10-BIT FET BUS SWITCH WITH INTERNAL PULLDOWN RESISTORS 文件：67.63 Kbytes Page：5 Pages | TI 德州仪器 | | |
SN74CBTLV3857 | LOW-VOLTAGE 10-BIT FET BUS SWITCH WITH INTERNAL PULLDOWN RESISTORS 文件：687.7 Kbytes Page：10 Pages | TI 德州仪器 | | |
LOW-VOLTAGE 10-BIT FET BUS SWITCH WITH INTERNAL PULLDOWN RESISTORS Enable Signal Is SSTL_2 Compatible Flow-Through Architecture Optimizes PCB Layout Designed for Use With 200 Mbit/s Double Data-Rate (DDR) SDRAM Applications Switch On-State Resistance Is Designed to Eliminate Series Resistor to DDR SDRAM Internal 10-kΩ Pulldown Resistors to Ground on B Por | TI 德州仪器 | | ||
LOW-VOLTAGE 10-BIT FET BUS SWITCH WITH INTERNAL PULLDOWN RESISTORS Enable Signal Is SSTL_2 Compatible Flow-Through Architecture Optimizes PCB Layout Designed for Use With 200 Mbit/s Double Data-Rate (DDR) SDRAM Applications Switch On-State Resistance Is Designed to Eliminate Series Resistor to DDR SDRAM Internal 10-kΩ Pulldown Resistors to Ground on B Por | TI 德州仪器 | | ||
LOW-VOLTAGE 10-BIT FET BUS SWITCH WITH INTERNAL PULLDOWN RESISTORS Enable Signal Is SSTL_2 Compatible Flow-Through Architecture Optimizes PCB Layout Designed for Use With 200 Mbit/s Double Data-Rate (DDR) SDRAM Applications Switch On-State Resistance Is Designed to Eliminate Series Resistor to DDR SDRAM Internal 10-kΩ Pulldown Resistors to Ground on B Por | TI 德州仪器 | | ||
LOW-VOLTAGE 10-BIT FET BUS SWITCH WITH INTERNAL PULLDOWN RESISTORS Enable Signal Is SSTL_2 Compatible Flow-Through Architecture Optimizes PCB Layout Designed for Use With 200 Mbit/s Double Data-Rate (DDR) SDRAM Applications Switch On-State Resistance Is Designed to Eliminate Series Resistor to DDR SDRAM Internal 10-kΩ Pulldown Resistors to Ground on B Por | TI 德州仪器 | | ||
LOW-VOLTAGE 10-BIT FET BUS SWITCH WITH INTERNAL PULLDOWN RESISTORS Enable Signal Is SSTL_2 Compatible Flow-Through Architecture Optimizes PCB Layout Designed for Use With 200 Mbit/s Double Data-Rate (DDR) SDRAM Applications Switch On-State Resistance Is Designed to Eliminate Series Resistor to DDR SDRAM Internal 10-kΩ Pulldown Resistors to Ground on B Por | TI 德州仪器 | | ||
LOW-VOLTAGE 10-BIT FET BUS SWITCH WITH INTERNAL PULLDOWN RESISTORS Enable Signal Is SSTL_2 Compatible Flow-Through Architecture Optimizes PCB Layout Designed for Use With 200 Mbit/s Double Data-Rate (DDR) SDRAM Applications Switch On-State Resistance Is Designed to Eliminate Series Resistor to DDR SDRAM Internal 10-kΩ Pulldown Resistors to Ground on B Por | TI 德州仪器 | | ||
LOW-VOLTAGE 10-BIT FET BUS SWITCH WITH INTERNAL PULLDOWN RESISTORS 文件：687.7 Kbytes Page：10 Pages | TI 德州仪器 | | ||
LOW-VOLTAGE 10-BIT FET BUS SWITCH WITH INTERNAL PULLDOWN RESISTORS 文件：67.63 Kbytes Page：5 Pages | TI 德州仪器 | | ||
LOW-VOLTAGE 10-BIT FET BUS SWITCH WITH INTERNAL PULLDOWN RESISTORS 文件：687.7 Kbytes Page：10 Pages | TI 德州仪器 | | ||
LOW-VOLTAGE 10-BIT FET BUS SWITCH WITH INTERNAL PULLDOWN RESISTORS 文件：67.63 Kbytes Page：5 Pages | TI 德州仪器 | | ||
LOW-VOLTAGE 10-BIT FET BUS SWITCH WITH INTERNAL PULLDOWN RESISTORS 文件：687.7 Kbytes Page：10 Pages | TI 德州仪器 | | ||
封装/外壳：24-TFSOP（0.173"，4.40mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC BUS SWITCH 10 X 1:1 24TVSOP 集成电路（IC） 信号开关，多路复用器，解码器 | TI 德州仪器 | | ||
封装/外壳：24-SOIC（0.295"，7.50mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC BUS SWITCH 10 X 1:1 24SOIC 集成电路（IC） 信号开关，多路复用器，解码器 | TI 德州仪器 | | ||
LOW-VOLTAGE 10-BIT FET BUS SWITCH WITH INTERNAL PULLDOWN RESISTORS 文件：67.63 Kbytes Page：5 Pages | TI 德州仪器 | | ||
LOW-VOLTAGE 10-BIT FET BUS SWITCH WITH INTERNAL PULLDOWN RESISTORS 文件：687.7 Kbytes Page：10 Pages | TI 德州仪器 | | ||
LOW-VOLTAGE 10-BIT FET BUS SWITCH WITH INTERNAL PULLDOWN RESISTORS 文件：687.7 Kbytes Page：10 Pages | TI 德州仪器 | | ||
LOW-VOLTAGE 10-BIT FET BUS SWITCH WITH INTERNAL PULLDOWN RESISTORS 文件：67.63 Kbytes Page：5 Pages | TI 德州仪器 | | ||
LOW-VOLTAGE 10-BIT FET BUS SWITCH WITH INTERNAL PULLDOWN RESISTORS 文件：687.7 Kbytes Page：10 Pages | TI 德州仪器 | |
SN74CBTLV3857产品属性
- 类型
描述
- 型号
SN74CBTLV3857
- 功能描述
数字总线开关 IC LV 10bit FET w/Pldwn
- RoHS
否
- 制造商
Texas Instruments
- 开关数量
24
- 传播延迟时间
0.25 ns
- 最大工作温度
+ 85 C
- 最小工作温度
- 40 C
- 封装/箱体
TSSOP-56
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Texas Instruments |
25+ |
24-SOIC(0.295 7.50mm 宽) |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
TexasInstruments |
18+ |
ICLV10-BITFETBUSSW24-TVS |
6800 |
公司原装现货/欢迎来电咨询! |
|||
Texas Instruments |
24+ |
24-SOIC |
56300 |
一级代理/放心采购 |
|||
TI |
24+ |
SOIC24 |
23 |
||||
TI |
22+ |
TSSOP24 |
5000 |
只做原装,假一赔十 |
|||
TI/德州仪器 |
23+ |
SSOP |
50000 |
全新原装正品现货,支持订货 |
|||
TI |
24+ |
SOIC24 |
1492 |
只做原装，欢迎询价，量大价优 |
|||
TI |
2111 |
con |
100 |
现货常备产品原装可到京北通宇商城查价格 |
|||
TI |
22+ |
24SOIC |
9000 |
原厂渠道,现货配单 |
|||
TI/德州仪器 |
23+ |
SSOP |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
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SN74CBTLV3857规格书下载地址
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