SINGLE INVERTER GATE

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SINGLE INVERTER GATE

Features » Operation Voltage Range:4.5~5.5V « Low Power Dissipation:ICC=1pA (Max) @25°C » High Speed:teo=7.5ns(Typ) » ESD Protection Exceeds JESD 22 ~2000-V Human-Body Model (A114-A) -200-V Machine Model (A115-A) ~1000-V Charged-Device Model (C101)

The SN74AHCT1G04 contains one gate. The device performs the Boolean function Y = A.

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Single Inverter Gate

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封装/外壳：5-TSSOP，SC-70-5，SOT-353 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC INVERTER 1CH 1-INP SC70-5 集成电路（IC） 门和反相器

封装/外壳：5-TSSOP，SC-70-5，SOT-353 包装：管件 描述：IC INVERTER 1CH 1-INP SC70-5 集成电路（IC） 门和反相器

Single Inverter Gate

文件：908 Kbytes Page：19 Pages

Inverter

DESCRIPTION The 74AHC1G/AHCT1G04 is a high-speed Si-gate CMOS device. The 74AHC1G/AHCT1G04 provides the inverting buffer. FEATURES • Symmetrical output impedance • High noise immunity • ESD protection: – HBM EIA/JESD22-A114-A exceeds 2000 V – MM EIA/JESD22-A115-A exc

SINGLE INVERTER GATE

Description The 74AHCT1G04 is a single inverter gate with a standard totem pole output. The device is designed for operation with a power supply range of 4.5V to 5.5V. Features • Supply Voltage Range from 4.5V to 5.5V • ± 8 mA Output Drive at 5.0V • CMOS low power consumption •

Inverter

1. General description The 74AHC1G04; 74AHCT1G04 is a single inverter. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments. The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V. The AHCT devi

Inverter

1. General description The 74AHC1G04; 74AHCT1G04 is a single inverter. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments. The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V. The AHCT devi

Inverter

DESCRIPTION The 74AHC1G/AHCT1G04 is a high-speed Si-gate CMOS device. The 74AHC1G/AHCT1G04 provides the inverting buffer. FEATURES • Symmetrical output impedance • High noise immunity • ESD protection: – HBM EIA/JESD22-A114-A exceeds 2000 V – MM EIA/JESD22-A115-A exc