Very Low Distortion Attenuator Plastic Packaged PIN Diodes

Description The SMP1307 series of plastic packaged, surface mountable, low capacitance (0.3 pF) silicon PIN diodes are designed for use in attenuator applications from 5 MHz to beyond 2 GHz.The thick 175 µm I region of these PIN diodes makes them very attractive for use in very low distortion PI

Very Low Distortion Attenuator Plastic Packaged PIN Diodes

Description The SMP1307 series of plastic packaged, surface mountable, low capacitance (0.3 pF) silicon PIN diodes are designed for use in attenuator applications from 5 MHz to beyond 2 GHz. The thick 175 µm I region of these PIN diodes makes them very attractive for use in very low distortion PI

Very Low Distortion Attenuator Plastic Packaged PIN Diodes

The SMP1307 series of plastic packaged, surface mountable, low capacitance (0.3 pF) silicon PIN diodes are designed for use in attenuator applications from 5 MHz to beyond 2 GHz. The thick 175 µm I region of these PIN diodes makes them very attractive for use in very low distortion PI and TEE attenu • Low-distortion design\n• Frequency range from HF to > 2 GHz\n• Designed for CATV AGC applications\n• Designed for high-volume wireless applications\n• Available lead (Pb)-free and RoHS-compliant MSL-1 @ 260 °C per JEDEC J-STD-020;

Very Low Distortion Attenuator Plastic Packaged PIN Diodes

Description The SMP1307 series of plastic packaged, surface mountable, low capacitance (0.3 pF) silicon PIN diodes are designed for use in attenuator applications from 5 MHz to beyond 2 GHz. The thick 175 µm I region of these PIN diodes makes them very attractive for use in very low distortion PI

Very Low Distortion Attenuator Plastic Packaged PIN Diodes

Description The SMP1307 series of plastic packaged, surface mountable, low capacitance (0.3 pF) silicon PIN diodes are designed for use in attenuator applications from 5 MHz to beyond 2 GHz. The thick 175 µm I region of these PIN diodes makes them very attractive for use in very low distortion PI

Very Low Distortion Attenuator Plastic Packaged PIN Diodes

Description The SMP1307 series of plastic packaged, surface mountable, low capacitance (0.3 pF) silicon PIN diodes are designed for use in attenuator applications from 5 MHz to beyond 2 GHz. The thick 175 µm I region of these PIN diodes makes them very attractive for use in very low distortion PI

Very Low Distortion Attenuator Plastic Packaged PIN Diodes

Description The SMP1307 series of plastic packaged, surface mountable, low capacitance (0.3 pF) silicon PIN diodes are designed for use in attenuator applications from 5 MHz to beyond 2 GHz. The thick 175 µm I region of these PIN diodes makes them very attractive for use in very low distortion PI

Very Low Distortion Attenuator Plastic Packaged PIN Diodes

Description The SMP1307 series of plastic packaged, surface mountable, low capacitance (0.3 pF) silicon PIN diodes are designed for use in attenuator applications from 5 MHz to beyond 2 GHz. The thick 175 µm I region of these PIN diodes makes them very attractive for use in very low distortion PI

Very Low Distortion Attenuator Plastic Packaged PIN Diodes

Description The SMP1307 series of plastic packaged, surface mountable, low capacitance (0.3 pF) silicon PIN diodes are designed for use in attenuator applications from 5 MHz to beyond 2 GHz. The thick 175 µm I region of these PIN diodes makes them very attractive for use in very low distortion PI

Very Low Distortion Attenuator Plastic Packaged PIN Diodes

Description The SMP1307 series of plastic packaged, surface mountable, low capacitance (0.3 pF) silicon PIN diodes are designed for use in attenuator applications from 5 MHz to beyond 2 GHz. The thick 175 µm I region of these PIN diodes makes them very attractive for use in very low distortion PI

Very Low Distortion Attenuator Plastic Packaged PIN Diodes

Description The SMP1307 series of plastic packaged, surface mountable, low capacitance (0.3 pF) silicon PIN diodes are designed for use in attenuator applications from 5 MHz to beyond 2 GHz. The thick 175 µm I region of these PIN diodes makes them very attractive for use in very low distortion PI

Very Low Distortion Attenuator Plastic Packaged PIN Diodes

Description The SMP1307 series of plastic packaged, surface mountable, low capacitance (0.3 pF) silicon PIN diodes are designed for use in attenuator applications from 5 MHz to beyond 2 GHz. The thick 175 µm I region of these PIN diodes makes them very attractive for use in very low distortion PI

Very Low Distortion Attenuator Plastic Packaged PIN Diodes

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PIN 二极管 Ls=1.5nH SOT-23 Common Anode

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF DIODE PIN 200V 250MW SOT23-3 分立半导体产品 二极管 - 射频

Very Low Distortion Attenuator Plastic Packaged PIN Diodes

文件：755.47 Kbytes Page：9 Pages

PIN 二极管 Ls-1.5nH SOT-23 Common Cathode

Very Low Distortion Attenuator Plastic Packaged PIN Diodes

文件：755.47 Kbytes Page：9 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT） 描述：RF DIODE PIN 200V 250MW SOT23-3 分立半导体产品 二极管 - 射频

Very Low Distortion Attenuator Plastic Packaged PIN Diodes

文件：755.47 Kbytes Page：9 Pages

Very Low Distortion Attenuator Plastic Packaged PIN Diodes

文件：755.47 Kbytes Page：9 Pages

PIN Diode Chips Supplied on Film Frame

文件：435.55 Kbytes Page：5 Pages

64 X 8 Serial Real Time Clock

DESCRIPTION The DS1307 Serial Real-Time Clock is a low-power, full binary-coded decimal (BCD) clock/calendar plus 56 bytes of NV SRAM. Address and data are transferred serially via a 2-wire, bi-directional bus. The clock/calendar provides seconds, minutes, hours, day, date, month, and year info

64 X 8 Serial Real Time Clock

DESCRIPTION The DS1307 Serial Real-Time Clock is a low-power, full binary-coded decimal (BCD) clock/calendar plus 56 bytes of NV SRAM. Address and data are transferred serially via a 2-wire, bi-directional bus. The clock/calendar provides seconds, minutes, hours, day, date, month, and year info

High-performance bitstream digital filter

FEATURES • Multiple format inputs: I2S, Sony 16, 18 and 20-bit • 8-sample interpolation error concealment • Digital mute, attenuation−12 dB • Digital audio output function (biphase-mark encoded) according to IEC 958 • Digital silence detection (output) • Digital de-emphasis (sele

Ka Band Low Noise Amplifier

Key Features and Performance • 0.25um pHEMT Technology • 23-29 GHz Frequency Range • 3.1 dB Nominal Noise Figure 28GHz • 17 dB Nominal Gain • OTOI > 22dBm • 5V, 50 mA Self-Bias Primary Applications • Point-to-Point Radio • Point-to-Multipoint Communications

DRIVER AMPLIFIER GaAs MMIC

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