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型号 功能描述 生产厂家 企业 LOGO 操作
SMG2310

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Battery Switch • DC/DC Converter

VBSEMI

微碧半导体

SMG2310

N-Channel Enhancement Mode Power Mos.FET

SECOS

喜可士

SMG2310

N-Channel Enhancement Mode Power Mos.FET

文件:253.54 Kbytes Page:4 Pages

SECOS

喜可士

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Battery Switch • DC/DC Converter

VBSEMI

微碧半导体

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Battery Switch • DC/DC Converter

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

VBSEMI

微碧半导体

N-Ch Enhancement Mode Power MOSFET

SECOS

喜可士

N-Ch Enhancement Mode Power MOSFET

文件:906.47 Kbytes Page:3 Pages

SECOS

喜可士

MosFET

SECOS

喜可士

N-Channel Enhancement Mode MOSFET

文件:412.75 Kbytes Page:4 Pages

SECOS

喜可士

N-Channel Enhancement Mode MOSFET

文件:407.19 Kbytes Page:4 Pages

SECOS

喜可士

N-Channel Enhancement Mode MOSFET

文件:711.42 Kbytes Page:4 Pages

SECOS

喜可士

N-Channel Enhancement Mode MOSFET

文件:711.42 Kbytes Page:4 Pages

SECOS

喜可士

Silicon NPN Transistor High Voltage, High Speed Switch

Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications.

NTE

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ■ NEW SERIES, ENHANCED PERFORMANCE ■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING ■ HIGH VOLTAGE CA

STMICROELECTRONICS

意法半导体

PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications

文件:662.5 Kbytes Page:29 Pages

NSC

国半

PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications

文件:662.5 Kbytes Page:29 Pages

NSC

国半

PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications

文件:662.5 Kbytes Page:29 Pages

NSC

国半

SMG2310产品属性

  • 类型

    描述

  • 型号

    SMG2310

  • 制造商

    SECOS

  • 制造商全称

    SeCoS Halbleitertechnologie GmbH

  • 功能描述

    N-Channel Enhancement Mode Power Mos.FET

更新时间:2026-3-17 17:43:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SECOS
23+
SC-59
50000
原装正品 支持实单
SECOS
36118
SOT23-3
2015
专业代理MOS管,型号齐全,公司优势产品
SECOS
22+
SOT23-3
3000
原装正品,支持实单
Secos
SC-59
99550
一级代理 原装正品假一罚十价格优势长期供货
SECOS
24+
SOT23-3
363000
原装现货
SECOS
23+
SOT-23
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
SeCoS
19+
SC-59
200000
SECOS
24+
SC-59
9600
原装现货,优势供应,支持实单!
SeCoS
24+
SC-59
85000
原装现货假一赔十
VBsemi/台湾微碧
22+
SC-59
20000
公司只做原装 品质保障

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