| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SMG2310 | N-Channel 60-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Battery Switch • DC/DC Converter | VBSEMI 微碧半导体 |   | |
SMG2310 | N-Channel Enhancement Mode Power Mos.FET | SECOS 喜可士 | | |
SMG2310 | N-Channel Enhancement Mode Power Mos.FET 文件：253.54 Kbytes Page：4 Pages | SECOS 喜可士 | | |
N-Channel 60-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Battery Switch • DC/DC Converter | VBSEMI 微碧半导体 | | ||
N-Channel 60-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Battery Switch • DC/DC Converter | VBSEMI 微碧半导体 | | ||
N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter | VBSEMI 微碧半导体 | | ||
N-Ch Enhancement Mode Power MOSFET | SECOS 喜可士 | | ||
N-Ch Enhancement Mode Power MOSFET 文件：906.47 Kbytes Page：3 Pages | SECOS 喜可士 | | ||
MosFET | SECOS 喜可士 | | ||
N-Channel Enhancement Mode MOSFET 文件：412.75 Kbytes Page：4 Pages | SECOS 喜可士 | | ||
N-Channel Enhancement Mode MOSFET 文件：407.19 Kbytes Page：4 Pages | SECOS 喜可士 | | ||
N-Channel Enhancement Mode MOSFET 文件：711.42 Kbytes Page：4 Pages | SECOS 喜可士 | | ||
N-Channel Enhancement Mode MOSFET 文件：711.42 Kbytes Page：4 Pages | SECOS 喜可士 | | ||
Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications. | NTE | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ■ NEW SERIES, ENHANCED PERFORMANCE ■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING ■ HIGH VOLTAGE CA | STMICROELECTRONICS 意法半导体 | | ||
PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications 文件：662.5 Kbytes Page：29 Pages | NSC 国半 | | ||
PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications 文件：662.5 Kbytes Page：29 Pages | NSC 国半 | | ||
PLLatinum??Ultra Low Power Frequency Synthesizer for RF Personal Communications 文件：662.5 Kbytes Page：29 Pages | NSC 国半 | |
SMG2310产品属性
- 类型
描述
- VDS (V)：
60
- VGS (±V)：
20
- IDS (A)_Ta=25°C：
5
- RDS(ON) (mΩ max) at VGS=10V：
115
- RDS(ON) (mΩ max) at VGS=4.5V：
125
- Case：
SC-59
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SECOS |
23+ |
SC-59 |
50000 |
原装正品 支持实单 |
|||
SECOS |
24+ |
SC-59 |
9600 |
原装现货,优势供应,支持实单! |
|||
SECOS |
23+ |
SOT-23 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
SECOS |
23+ |
SC-59 |
50000 |
全新原装正品现货,支持订货 |
|||
SeCoS |
24+ |
SC-59 |
85000 |
原装现货假一赔十 |
|||
SeCoS |
19+ |
SC-59 |
200000 |
||||
SECOS |
22+ |
SOT23-3 |
3000 |
原装正品,支持实单 |
|||
SECOS |
2019+PB |
SC-59 |
85000 |
原装正品 可含税交易 |
|||
VBsemi/台湾微碧 |
22+ |
SC-59 |
20000 |
公司只做原装 品质保障 |
|||
Secos |
SC-59 |
99550 |
一级代理 原装正品假一罚十价格优势长期供货 |
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SMG2310规格书下载地址
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DdatasheetPDF页码索引
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