Transient Voltage Suppressors SMBJ5V0(C)A - SMBJ170(C)A

Features • Glass passivated junction. • 600W Peak Pulse Power capability on 10/1000 µs waveform. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time; typically less than 1.0 ps from 0 volts to BV for unidirectional and 5.0 ns for bidirectional. • Typical

600 Watt Transient Voltage Suppressors

Features • Glass-Passivated Junction • 600 W Peak Pulse Power Capability on 10/1000 μs Waveform. • Excellent Clamping Capability • Low-Incremental Surge Resistance • Fast Response Time: Typically Less than 1.0 ps from 0 V to BV minimum for Unidirectional and 5.0 ns for Bidirectional • Typica

SMBJ7V5CA: 600 Watt Transient Voltage Suppressors

SMBJ7V5CA 玻璃钝化结\n在 10/1000 µs 波形下，具有 600 W 的峰值脉冲功率能力。\n极佳的箝位能力\n低增量浪涌电阻\n快速响应时间： 单向一般 1.0 ps 之内可从 0 V 升至 BV；双向一般为 5.0 ns\n 10 V 以上时，IR一般小于 1.0 μA\nUL 认证编号 E258596\nUL94V-0 级阻燃\n可用于双极性应用\n双向型采用 CA 后缀\n电气特性同时适用于两个方向;

封装/外壳：DO-214AA，SMB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TVS DIODE 7.5VWM 12.9VC DO214AA 电路保护 TVS - 二极管

TVS

600W, 8.8V, 5%, Bidirectional, TVS

Silicon Epitaxial Planar Z-Diodes

Features ● Very sharp reverse characteristic ● Low reverse current level ● Available with tighter tolerances ● Very high stability ● Low noise ● VZ–tolerance ± 2 Applications    Voltage stabilization

Silicon Epitaxial Planar Z-Diodes

FEATURES • Very sharp reverse characteristic • Low reverse current level • Very high stability • Low noise • TZMC - VZ-tolerance ± 5 • TZMB - VZ-tolerance ± 2 • AEC-Q101 qualified

Silicon Epitaxial Planar Z-Diodes

文件：95.77 Kbytes Page：7 Pages

Silicon Epitaxial Planar Z-Diodes

文件：95.77 Kbytes Page：7 Pages

Silicon Epitaxial Planar Z-Diodes

文件：95.77 Kbytes Page：7 Pages