Cascadable Amplifier 5 to 500 MHz

Description The A5 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays impressive performance over a broadband frequency range. Both TO-8 and

Cascadable Amplifier

SMA(DO-214AC)TVS 二极管/ESD 抑制器

Features Glass Passivated Die Construction Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Plastic Material: UL Flammability Classification Rating 94V-0 Mechanical Data Case: SMA/DO-214AC, Molded Plastic! Terminals: Solder Plated, Solderable per MIL-

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

Stand-off Voltage 5.0 to 170 Volts Peak Pulse Power 300 Watts FEATURES · For surface mounted applications in order to optimize board space · Low profile package · Built-in strain relief · Glass passivated junction · Low inductance · Excellent clamping capability · Repe

SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

VOLTAGE RANGE: 5.0 - 440 V POWER: 400Watts Features ● Glass Passivated Die Construction ● Uni- and Bi-Directional Versions Available ● Excellent Clamping Capability ● Fast Response Time ● Plastic Material: UL Flammability Classification Rating 94V-0

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

Stand-off Voltage 5.0 to 170 Volts Peak Pulse Power 300 Watts FEATURES · For surface mounted applications in order to optimize board space · Low profile package · Built-in strain relief · Glass passivated junction · Low inductance · Excellent clamping capability · Repe

SURFACE MOUNT TRANSIENT VOLAGE SUPPESSOR DIODE

VOLTAGE RANGE: 5.0 - 440 V POWER: 400Watts Features ● Glass Passivated Die Construction ● Uni- and Bi-Directional Versions Available ● Excellent Clamping Capability ● Fast Response Time ● Plastic Material: UL Flammability Classification Rating 94V-0

SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

VOLTAGE RANGE: 5.0 - 440 V POWER: 400Watts Features ● Glass Passivated Die Construction ● Uni- and Bi-Directional Versions Available ● Excellent Clamping Capability ● Fast Response Time ● Plastic Material: UL Flammability Classification Rating 94V-0

Transient Voltage Suppressors

FEATURES Constructed with Glass Passivated Die Low inductance Excellent clamping capability Uni and bidirectional unit Very fast response time Component in accordance to RoHS 2002/95/EC

SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

VOLTAGE RANGE: 5.0 - 440 V POWER: 400Watts Features ● Glass Passivated Die Construction ● Uni- and Bi-Directional Versions Available ● Excellent Clamping Capability ● Fast Response Time ● Plastic Material: UL Flammability Classification Rating 94V-0

SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

VOLTAGE RANGE: 5.0 - 440 V POWER: 400Watts Features ● Glass Passivated Die Construction ● Uni- and Bi-Directional Versions Available ● Excellent Clamping Capability ● Fast Response Time ● Plastic Material: UL Flammability Classification Rating 94V-0

Transient Voltage Suppressors

FEATURES Constructed with Glass Passivated Die Low inductance Excellent clamping capability Uni and bidirectional unit Very fast response time Component in accordance to RoHS 2002/95/EC

UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS

STAND-OFF VOLTAGE - 6.8 to 200 Volts POWER DISSIPATION - 400 WATTS FEATURES ● Rating to 200V VBR ● For surface mounted applications ● Reliable low cost construction utilizing molded plastic technique ● Plastic material has UL flammability classification 94V-O ● Typical IR less than 1uA above

Cascadable Amplifier 10 to 400 MHz

Description The A51 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays impressive performance over a broadband frequency range. Both TO-8 and

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

Stand-off Voltage 5.0 to 170 Volts Peak Pulse Power 300 Watts FEATURES · For surface mounted applications in order to optimize board space · Low profile package · Built-in strain relief · Glass passivated junction · Low inductance · Excellent clamping capability · Repe

Cascadable Amplifier 10 to 400 MHz

Description The A51 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays impressive performance over a broadband frequency range. Both TO-8

SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

VOLTAGE RANGE: 5.0 - 440 V POWER: 400Watts Features ● Glass Passivated Die Construction ● Uni- and Bi-Directional Versions Available ● Excellent Clamping Capability ● Fast Response Time ● Plastic Material: UL Flammability Classification Rating 94V-0

N-channel General purpose

N-channel General purpose

RF Double Balanced Mixer IC

Features • Wide band : up to Ku band • Low distortion : IIP3=20dBm (@ICC > 11mA) • SMT, Ultra small package : 2.0×2.1×0.85mm • High conversion gain : --0.5dB (@450MHz) • Low voltage available : 1.2V and above • Halogen free compliance

Mixer, IIP3 15dBm, Gc -0.5dB 450MHz, MCPH6

Features • Wide band : up to Ku band • Low distortion : IIP3=20dBm (@ICC > 11mA) • SMT, Ultra small package : 2.0×2.1×0.85mm • High conversion gain : --0.5dB (@450MHz) • Low voltage available : 1.2V and above • Halogen free compliance

Mixer, IIP3 15dBm, Gc -0.5dB 450MHz, MCPH6

Features • Wide band : up to Ku band • Low distortion : IIP3=20dBm (@ICC > 11mA) • SMT, Ultra small package : 2.0×2.1×0.85mm • High conversion gain : --0.5dB (@450MHz) • Low voltage available : 1.2V and above • Halogen free compliance

N-channel With built-in flywheel diode

N-channel With built-in flywheel diode

N-channel P-channel 3-phase motor drive

N-channel + P-channel 3-phase motor drive External dimensions B • • • SMA

N-channel With built-in flywheel diode

N-channel With built-in flywheel diode

N-channel With built-in flywheel diode

N-channel With built-in flywheel diode

Cascadable Amplifier 10 to 500 MHz

Description The A511 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays impressive performance over a broadband frequency range. Use of an im

Cascadable Amplifier 10 to 500 MHz Rev. V2

Description The A511 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays impressive performance over a broadband frequency range. Use of an im

N-channel 3-phase DC motor 100V AC direct drive

N-channel 3-phase DC motor 100V AC direct drive External dimensions B • • • SMA

MOS FET Array

MOS FET Array

N-channel With built-in flywheel diode

N-channel With built-in flywheel diode

N-channel 3-phase DC motor 100V AC direct drive

N-channel 3-phase DC motor 100V AC direct drive

N-channel 3-phase DC motor 200V AC direct drive

N-channel P-channel 3-phase motor drive

N-channel + P-channel 3-phase motor drive

N-channel P-channel 3-phase motor drive

N-channel + P-channel 3-phase motor drive

Cascadable Amplifier 10 to 500 MHz

Description The A513 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays impressive performance over a broadband

10 TO 500 MHz TO-8 CASCADABLE AMPLIFIER

Description The A513 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays impressive performance over a broadband

Cascadable Amplifier 10 to 500 MHz

Description The SMA514 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This 2 stage bipolar transistor feedback amplifier design displays impressive performance over a broadband frequency range. An active DC bi

Cascadable Amplifier 10 to 500 MHz

Description The A514 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This 2 stage bipolar transistor feedback amplifier design displays impressive performance over a broadband frequency range. An active DC bias

Cascadable Amplifier 10 to 500 MHz

Description The SMA515 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This 2 stage bipolar transistor feedback amplifier design displays impressive performance characteristics over a broadband frequency range.

Cascadable Amplifier 10 to 500 MHz

Description The A515 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This 2 stage bipolar transistor feedback amplifier design displays impressive performance characteristics over a broadband frequency range. A

UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS

STAND-OFF VOLTAGE - 6.8 to 200 Volts POWER DISSIPATION - 400 WATTS FEATURES ● Rating to 200V VBR ● For surface mounted applications ● Reliable low cost construction utilizing molded plastic technique ● Plastic material has UL flammability classification 94V-O ● Typical IR less than 1uA above

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

Stand-off Voltage 5.0 to 170 Volts Peak Pulse Power 300 Watts FEATURES · For surface mounted applications in order to optimize board space · Low profile package · Built-in strain relief · Glass passivated junction · Low inductance · Excellent clamping capability · Repe

SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

VOLTAGE RANGE: 5.0 - 440 V POWER: 400Watts Features ● Glass Passivated Die Construction ● Uni- and Bi-Directional Versions Available ● Excellent Clamping Capability ● Fast Response Time ● Plastic Material: UL Flammability Classification Rating 94V-0

Transient Voltage Suppressors

FEATURES Constructed with Glass Passivated Die Low inductance Excellent clamping capability Uni and bidirectional unit Very fast response time Component in accordance to RoHS 2002/95/EC

SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

VOLTAGE RANGE: 5.0 - 440 V POWER: 400Watts Features ● Glass Passivated Die Construction ● Uni- and Bi-Directional Versions Available ● Excellent Clamping Capability ● Fast Response Time ● Plastic Material: UL Flammability Classification Rating 94V-0

SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

VOLTAGE RANGE: 5.0 - 440 V POWER: 400Watts Features ● Glass Passivated Die Construction ● Uni- and Bi-Directional Versions Available ● Excellent Clamping Capability ● Fast Response Time ● Plastic Material: UL Flammability Classification Rating 94V-0

Transient Voltage Suppressors

FEATURES Constructed with Glass Passivated Die Low inductance Excellent clamping capability Uni and bidirectional unit Very fast response time Component in accordance to RoHS 2002/95/EC

Up to 72% more energy in light-rail applications compared to other ultracapacitor modules

+ 51V DC nominal voltage + Rail-certified + Ultra-low ESR + Long lifetime - 1 million duty cycles + Integrated Supercapacitor Management System for effective cell balancing + CAN bus communication + Natural cooling + High Power output + IP65

Cascadable Amplifier 10 to 500 MHz

Description The A53 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays impressive performance over a broadband frequency range. Both TO-8

Cascadable Amplifier 10 to 500 MHz

Description The A53 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays impressive performance over a broadband frequency range. Both TO-8 and

10 TO 500 MHz CASCADABLE AMPLIFIER

Cascadable Amplifier 10 to 500 MHz

Cascadable Amplifier 10 to 500 MHz

Description The A531 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays impressive performance over a broadb

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

Stand-off Voltage 5.0 to 170 Volts Peak Pulse Power 300 Watts FEATURES · For surface mounted applications in order to optimize board space · Low profile package · Built-in strain relief · Glass passivated junction · Low inductance · Excellent clamping capability · Repe

Cascadable Amplifier 5 to 500 MHz

Description The A54 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance and high reliability. This 2 stage bipolar transistor feedback amplifier design displays impressive performance over a broadband frequency range. An active DC bia

SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

VOLTAGE RANGE: 5.0 - 440 V POWER: 400Watts Features ● Glass Passivated Die Construction ● Uni- and Bi-Directional Versions Available ● Excellent Clamping Capability ● Fast Response Time ● Plastic Material: UL Flammability Classification Rating 94V-0

5 TO 500 MHz CASCADABLE AMPLIFIER

Description The A54 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance and high reliability. This 2 stage bipolar transistor feedback amplifier design displays impressive performance over a broadband frequency range. An active DC bia

Active Biased RF Transistor

DESCRIPTION The SMA540B is a NPN Transistor integrating a current mirror as biasing. In this way the IC (collector current) can be controlled setting the current at Bias pin according to IC = 10 * IBIAS. The IBIAS current is easy adjustable using an external resistor. SMA540B is housed in ultra m

Active Biased RF Transistor

DESCRIPTION The SMA540B is a NPN Transistor integrating a current mirror as biasing. In this way the IC (collector current) can be controlled setting the current at Bias pin according to IC = 10 * IBIAS. The IBIAS current is easy adjustable using an external resistor. SMA540B is housed in ultra m

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

Stand-off Voltage 5.0 to 170 Volts Peak Pulse Power 300 Watts FEATURES · For surface mounted applications in order to optimize board space · Low profile package · Built-in strain relief · Glass passivated junction · Low inductance · Excellent clamping capability · Repe

SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

VOLTAGE RANGE: 5.0 - 440 V POWER: 400Watts Features ● Glass Passivated Die Construction ● Uni- and Bi-Directional Versions Available ● Excellent Clamping Capability ● Fast Response Time ● Plastic Material: UL Flammability Classification Rating 94V-0