SCHOTTKY DIODES REVERSE VOLTAGE 20 TO 200V FORWARD CURRENT 5.0A

DESCRIPTION The SM 5 20 B F SM 5 2 00 B F are available in SM B F p ackage. FEATURES  Metal silicon junction, majority carrier conduction  For surface mounted applications  Low power loss, high efficiency  High forward surge current capability  For use in low voltage, high frequenc

肖特基二极管

Schottky Barrier Rectifiers

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Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini power type package (2-pin) • Allowing automatic mounting with the emboss taping • Sharp rising performance

RF dual gain-stage

DESCRIPTION The SA5200 is a dual amplifier with DC to 1200MHz response. Low noise (NF = 3.6dB) makes this part ideal for RF front-ends, and a simple power-down mode saves current for battery operated equipment. Inputs and outputs are matched to 50Ω. The enable pin allows the designer the abilit

High Speed IR Emitting Diode in ø5 mm (T–13/4) Package

DESCRIPTION TSFF5210 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1 3/4 • Dimensions (in mm): Ø 5 • Leads with stand-off •

1.55 關m Laser-Diode DIP Module

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High Efficiency LED, 5 mm Tinted Non-Diffused Package

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