4-Bit Single-Chip Microcomputer(For Data Bank Use)

DESCRIPTION The SM3512 is a CMOS 4-bit single-chip microcomputer for databank incorporating data memory RAM, LCD driver, key/switch input circuit, 8-bit parallel I/O port, 2 output ports, external memory control circuit, and buzzer output circuit. FEATURES • ROM capacity : Program

4-Bit Single-Chip Microcomputer (For Data Bank Use)

DESCRIPTION\nThe SM3512 is a CMOS 4-bit single-chip microcomputer for databank incorporating data memory RAM, LCD driver, key/switch input circuit, 8-bit parallel I/O port, 2 output ports, external memory control circuit, and buzzer output circuit.FEATURES\n• ROM capacity :\n   Program ROM 8 k x 23 • ROM capacity :\n   Program ROM 8 k x 23 bits\n   Character ROM 5 x 9 x 128 bits\n   Constant ROM 208 x 4 bits\n• RAM capacity :\n   Working RAM 256 x 4 bits\n   Display RAM 60 x 9 bits\n   Data RAM 8 k x 8 bits\n• Memory expansion (external) : 8 k x 8 bits\n• LCD display : 60-segment x 9-common\n•;

LCD Driver

Description The CXA3512R is a driver IC for the analog inputs of SVGA or higher Sony polycrystalline silicon TFT LCD panels. It has a line invert amplifier and analog demultiplexers, as well as the timing generator and output buffers required for these. The CXA3512R can directly drive an LCD pane

80V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 3.0

80V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features • 4.0 A, 80 V RDS(ON) = 70 mΩ @ VGS = 10 V RDS(ON) = 80 mΩ @ VGS = 6 V • Low gate charge (

25, 35A THREE PHASE BRIDGE RECTIFIER

25, 35ATHREE PHASE BRIDGE RECTIFIER Features ! Glass Passivated Die Construction ! Low Forward Voltage Drop ! High Current Capability ! High Reliability ! High Surge Current Capability !