EPD TVS Diode Array For ESD and Latch-Up Protection

Description The SLV series of transient voltage suppressors are designed to protect low voltage, state-of-the-art CMOS semiconductors from transients caused by electrostatic discharge (ESD), cable discharge events (CDE), lightning and other induced voltage surges. The devices are constructed usi

EPD TVS Diode Array For ESD and Latch-Up Protection

Description The SLV series of transient voltage suppressors are designed to protect low voltage, state-of-the-art CMOS semiconductors from transients caused by electrostatic discharge (ESD), cable discharge events (CDE), lightning and other induced voltage surges. The devices are constructed usi

EPD TVS Diode Array For ESD and Latch-Up Protection

Description The SLV series of transient voltage suppressors are designed to protect low voltage, state-of-the-art CMOS semiconductors from transients caused by electrostatic discharge (ESD), cable discharge events (CDE), lightning and other induced voltage surges. The devices are constructed usi

2.8V TVS Array For ESD and Latch-Up Protection

flow through design makes the SLVU2.8-4.TBT contact discharge. The SLVU2.8-4.TBT is assembled SLVU2.8-4 The SLVU2.8-4.TBT Description is designed to protect low voltage,CMOS semiconductors from transients caused by electrostatic discharge(ESD),cable discharge events(CDE), lightning and oth

EPD TVS Diode Array For ESD and Latch-Up Protection

Description The SLV series of transient voltage suppressors are designed to protect low voltage, state-of-the-art CMOS semiconductors from transients caused by electrostatic discharge (ESD), cable discharge events (CDE), lightning and other induced voltage surges. The devices are constructed usi

EPD TVS Diode Array For ESD and Latch-Up Protection

Description The SLV series of transient voltage suppressors are designed to protect low voltage, state-of-the-art CMOS semiconductors from transients caused by electrostatic discharge (ESD), cable discharge events (CDE), lightning and other induced voltage surges. The devices are constructed usi

TVS Array For ESD and Latch Up Protection

Features ● 100W peak pulse power(8/20μs) ● Protects two line pairs(four lines) ● Ultra low leakage: nA level ● Low operating voltage: 2.8V ●Low capacitance ● Ultra low clamping voltage ● JEDEC SO-8 package ● Complies with following standards: - IEC 61000-4-2 (ESD) immunity test Air dis

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：剪切带（CT）带盒（TB） 描述：SOP-8 电路保护 TVS - 二极管

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT） 描述：TVS DIODE 2.8VWM 15VC 8-SO 电路保护 TVS - 二极管

Tiva??C Series TM4C1294 Connected LaunchPad Evaluation Kit

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Transient Voltage Suppressors for ESD Protection

Feature 2125 Watts Peak Pulse Power per Line (tp=8/20μs) Protects two line pairs (four lines) Low Clamping Voltage Low leakage current IEC61000-4-2(ESD) ±30kV (air),±30kV (contact) IEC61000-4-4 (EFT) 40A (5/50ηs) IEC61000-4-5 (LIGHTING) 85A (8/20μs) Applications 10/100 Ethernet WAN/LAN

Transient Voltage Suppressors for ESD Protection

Feature Moisture Sensitivity Level (MSL -1) AEC-Q101 qualified 2000 Watts Peak Pulse Power per Line (tp=8/20μs) Protects two line pairs (four lines) Low clamping voltage Low capacitance RoHS compliant IEC61000-4-2(ESD) ±30kV (air),±30kV (contact) IEC61000-4-4 (EFT) 40A (5/50ηs) IEC61000-

Low Capacitance ESD Protection

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Low Capacitance ESD Protection

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