High speed, high integration gate array

DESCRIPTION The SLA9000F series is a SOG type CMOS gate which has realized high speed, high integration and high driving capability. This series is offered with 2,784 to 44,070 gates to ensure an optimum application for any mid size high speed systems. This series is designed to operate on both

14 WATT 880-915 MHz RF POWER AMPLIFIER

UHF Silicon FEt Power Amplifier Designed specifically for the Pan European digital 8.0 watt, GSM mobile radio. The MHW913 is capable of wide power range control, operates from a 12.5 volt supply and requires less than 100 mW of RF input power. • Specified 12.5 V Characteristics RF

MOSMIC for TV-Tuner Prestage with 9 V Supply Voltage

MOSMIC - MOS Monolithic Integrated Circuit Features ● Integrated gate protection diodes ● Low noise figure ● High gain ● Biasing network on chip ● Improved cross modulation at gain reduction ● High AGC-range ● SMD package Applications    Low noise gain controlled input stages in UHF-and

MOSMIC for TV-Tuner Prestage with 9 V Supply Voltage

MOSMIC - MOS Monolithic Integrated Circuit Features ● Integrated gate protection diodes ● Low noise figure ● High gain ● Biasing network on chip ● Improved cross modulation at gain reduction ● High AGC-range ● SMD package Applications    Low noise gain controlled input stages in UHF-and

DUAL AUTO-ZEROED OPERATIONAL AMPLIFIERS

文件：48.85 Kbytes Page：4 Pages

DUAL AUTO-ZEROED OPERATIONAL AMPLIFIERS

文件：48.85 Kbytes Page：4 Pages