HIGH SPEED IGBT IN NPT-TECHNOLOGY

High Speed IGBT in NPT-technology • 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature -

High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation

文件：353.64 Kbytes Page：14 Pages

High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation

文件：353.64 Kbytes Page：14 Pages

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 41A 250W TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

BIDW30N60T Insulated Gate Bipolar Transistor (IGBT)

General Information The Bourns® Model BIDW30N60T IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteris

Low Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode

文件：1.9827 Mbytes Page：16 Pages

ACTIVE / SYNCHRONOUS RECTIFIER

文件：672.35 Kbytes Page：15 Pages

N-Channel Enhancement Mode MOSFET

文件：281.61 Kbytes Page：4 Pages

N-Channel Enhancement Mode MOSFET

文件：264.01 Kbytes Page：4 Pages