Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for:     - Motor controls     - Inverter     - SMPS • NPT-Technology offers:     - very tight parameter distributi

IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)= 3.6V@IC=2A · Pb-free lead plating, RoHS compliant APPLICATIONS · Motor Controls · SMPS · Inverter

分立式IGBT

封装/外壳：TO-220-3 包装：管件 描述：IGBT 1200V 6.2A 62W TO220-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for:     - Motor controls     - Inverter     - SMPS • NPT-Technology offers:     - very tight parameter distributi

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 0.2A@ TC=25℃ ·Drain Source Voltage : VDSS= 1200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 75Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed fo

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=0.2A@ TC=25℃ ·Drain Source Voltage -VDSS=1200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =75Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Enhancement Mode Avalanche Rated

文件：134.57 Kbytes Page：4 Pages

N-Channel Enhancement Mode Avalanche Rated

文件：134.57 Kbytes Page：4 Pages