N ch Trench Power MOSFET

Features ● V(BR)DSS --------------------------------- 30 V (ID = 100 µA) ● ID ----------------------------------------------------------85 A ● RDS(ON) ----------- 2.6 mΩ max. (VGS = 10 V, ID = 110A) ● Qg------ 42.3 nC (VGS = 4.5 V, VDS = 15 V, ID = 110 A) ● Low Total Gate Charge ● High Speed

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 85A@ TC=25℃ • Drain Source Voltage- : VDSS= 30V(Min) • Static Drain-Source On-Resistance : RDS(on) = 2.6mΩ (Max) • 100 avalanche tested • Minimum Lot-to-L

硅 N 通道型 MOSFET

N ch Trench Power MOSFET

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